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AMORPHOUS HYDROGENATED ALLOYS : A COMPARATIVE EXAFS STUDY OF a-Si_1-xC_x : H, a-Si_{1- x}Ge_x : H, a-SiN_x : H AT THE SILICON K-EDGE

A. FILIPPONI, P. FIORINI, F. EVANGELISTI, A. BALERNA, S. MOBILIO

J. Phys. Colloques, 47 C8 (1986) C8-357-C8-361

DOI: https://doi.org/10.1051/jphyscol:1986870

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Citations de cet article :

Composition and thermal-annealing-induced short-range ordering changes in amorphous hydrogenated silicon carbide films as investigated by extended x-ray-absorption fine structure and infrared absorption

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Physical Review B 45 (12) 6517 (1992)
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Simultaneous analysis of multiple extended x-ray-absorption fine-structure spectra: Application to studies of buried Ge-Si interfaces

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https://doi.org/10.1103/PhysRevB.45.13579

Structural investigation of a-Si and a-Si:H using x-ray-absorption spectroscopy at the Si K edge

A. Filipponi, F. Evangelisti, M. Benfatto, S. Mobilio and C. Natoli
Physical Review B 40 (14) 9636 (1989)
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https://doi.org/10.1103/PhysRevB.38.13099

Epitaxial Growth and Band Structure Effects at the Si/Ge(111) Interface

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MRS Proceedings 102 (1987)
https://doi.org/10.1557/PROC-102-283