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Article cité :
A. Bourret
J. Phys. Colloques, 46 C4 (1985) C4-27-C4-38
Citations de cet article :
8 articles
Ab initiostudy of structural and electronic properties of planar defects in Si and SiC
C. Raffy, J. Furthmüller, J.-M. Wagner and F. Bechstedt Physical Review B 70 (19) (2004) https://doi.org/10.1103/PhysRevB.70.195344
Electronic structure of the Σ=9 high-angle tilt grain boundary in germanium
S.K. Mishra and S. Satpathy Physica B: Condensed Matter 254 (3-4) 234 (1998) https://doi.org/10.1016/S0921-4526(98)00471-2
〈110〉 symmetric tilt grain-boundary structures in fcc metals with low stacking-fault energies
J. D. Rittner and D. N. Seidman Physical Review B 54 (10) 6999 (1996) https://doi.org/10.1103/PhysRevB.54.6999
Structural complexity in grain boundaries with covalent bonding
E. Tarnow, P. Dallot, P. D. Bristowe, et al. Physical Review B 42 (6) 3644 (1990) https://doi.org/10.1103/PhysRevB.42.3644
Predicting the structure and energy of a grain boundary in germanium
E Tarnow, P D Bristowe, J D Joannopoulos and M C Payne Journal of Physics: Condensed Matter 1 (2) 327 (1989) https://doi.org/10.1088/0953-8984/1/2/001
On the origin of the electrical activity in silicon grain boundaries
J.-L. Maurice Revue de Physique Appliquée 22 (7) 613 (1987) https://doi.org/10.1051/rphysap:01987002207061300
Conductance of silicon grain boundaries in as-grown and annealed bicrystals
G. Poullain, B. Mercey and G. Nouet Journal of Applied Physics 61 (4) 1547 (1987) https://doi.org/10.1063/1.338088
Electronic and Structural Properties of a Twin Boundary in Si
D. P. DiVincenzo, O. L. Alerhand, M. Schlüter and J. W. Wilkins Physical Review Letters 56 (18) 1925 (1986) https://doi.org/10.1103/PhysRevLett.56.1925