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Article cité :

Aging Mechanisms of Broad Area ∼800 nm Laser Diodes

Elaine D. McVay, Robert J. Deri, Salmaan H. Baxamusa, William E. Fenwick, Jiang Li, Joel B. Varley, Daniel E. Mittelberger, Luyang Wang, Kevin P. Pipe, Matthew C. Boisselle, Laina V. Gilmore, Rebecca B. Swertfeger, Mark T. Crowley, Prabhu Thiagarajan, Jiyon Song, Gerald T. Thaler, Christopher F. Schuck and Adam Dusty
IEEE Journal of Selected Topics in Quantum Electronics 31 (2: Pwr. and Effic. Scaling in) 1 (2025)
https://doi.org/10.1109/JSTQE.2024.3466169

DFT calculations of carrier-trapping effects on atomic structures of 30° partial dislocation cores in zincblende II-VI group zinc compounds

Sena Hoshino, Yu Oshima, Tatsuya Yokoi, Atsutomo Nakamura and Katsuyuki Matsunaga
Physical Review Materials 7 (1) (2023)
https://doi.org/10.1103/PhysRevMaterials.7.013603

Electrical-stress driven oxidation in 940 nm oxide-confined VCSEL

Michael Pusterhofer, Robert Fabbro, Raffaele A Coppeta, Gernot Fasching and Peter Hadley
Semiconductor Science and Technology 37 (1) 015010 (2022)
https://doi.org/10.1088/1361-6641/ac3c99

Recombination-enhanced dislocation climb in InAs quantum dot lasers on silicon

Kunal Mukherjee, Jennifer Selvidge, Daehwan Jung, et al.
Journal of Applied Physics 128 (2) (2020)
https://doi.org/10.1063/1.5143606

Glide of threading dislocations in (In)AlGaAs on Si induced by carrier recombination: Characteristics, mitigation, and filtering

Eamonn T. Hughes, Rushabh D. Shah and Kunal Mukherjee
Journal of Applied Physics 125 (16) (2019)
https://doi.org/10.1063/1.5088844

Enhanced ductility of III-V covalent semiconductors from electrons and holes

Yidi Shen, Hongwei Wang and Qi An
Journal of Applied Physics 126 (19) (2019)
https://doi.org/10.1063/1.5128237

Direct observation of recombination-enhanced dislocation glide in heteroepitaxial GaAs on silicon

Patrick G. Callahan, Brian B. Haidet, Daehwan Jung, Gareth G. E. Seward and Kunal Mukherjee
Physical Review Materials 2 (8) (2018)
https://doi.org/10.1103/PhysRevMaterials.2.081601

Materials and Reliability Handbook for Semiconductor Optical and Electron Devices

Koji Maeda
Materials and Reliability Handbook for Semiconductor Optical and Electron Devices 263 (2013)
https://doi.org/10.1007/978-1-4614-4337-7_9

Fabrication of Short-Range Ordered Nanoholes on Silicon Surfaces by Electron Irradiation

Yutaka Ohno, Seiji Takeda, Toshinari Ichihashi and Sumio Iijima
Japanese Journal of Applied Physics 46 (1R) 434 (2007)
https://doi.org/10.1143/JJAP.46.434

A quantitative evaluation of the dynamic cathodoluminescence contrast of gliding dislocations in semiconductor crystals

S Vasnyov, J Schreiber and L Hoering
Journal of Physics: Condensed Matter 16 (2) S269 (2004)
https://doi.org/10.1088/0953-8984/16/2/032

First-principles calculations of the energy barrier to dislocation motion in Si and GaAs

S. Öberg, P. K. Sitch, R. Jones and M. I. Heggie
Physical Review B 51 (19) 13138 (1995)
https://doi.org/10.1103/PhysRevB.51.13138

Abinitioinvestigation of the dislocation structure and activation energy for dislocation motion in silicon carbide

P. K. Sitch, R. Jones, S. Öberg and M. I. Heggie
Physical Review B 52 (7) 4951 (1995)
https://doi.org/10.1103/PhysRevB.52.4951

TEMin situinvestigation of dislocation mobility in II-VI semiconductor compound ZnS cathodoplastic effect and the Peierls mechanism

A. Faress, C. Levade and G. Vanderschaeve
Philosophical Magazine A 68 (1) 97 (1993)
https://doi.org/10.1080/01418619308219359

On the formation of edge dislocations in InxGa1−xAs/GaAs heterostructures withx< 0·20

C. Ulhaq-Bouillet and A. Lefebvre
Philosophical Magazine A 68 (6) 1273 (1993)
https://doi.org/10.1080/01418619308222931

Possible origin of degradation mechanisms in AlGaAs/GaAs laserlike structures

B. Sieber, J. L. Farvacque, J. Wang and J. W. Steeds
Applied Physics Letters 60 (21) 2654 (1992)
https://doi.org/10.1063/1.106885

The photoplastic effect in GaAs, a model for device degradation phenomena

E. Depraetère, D. Vignaud, J. L. Farvacque, B. Sieber and A. Lefebvre
Philosophical Magazine A 61 (6) 893 (1990)
https://doi.org/10.1080/01418619008234949

Plastic deformation of GaAs single crystals as a function of electronic doping I: Medium temperatures (150–650°C)

P. Borvin, J. Rabier and H. Garem
Philosophical Magazine A 61 (4) 619 (1990)
https://doi.org/10.1080/01418619008231939

Deep levels associated with α and β dislocations in n-type InP

Alain Zozime and Wolfgang Schröter
Applied Physics Letters 57 (13) 1326 (1990)
https://doi.org/10.1063/1.103472

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership

F. Louchet and J. Thibault-Desseaux
Revue de Physique Appliquée 22 (4) 207 (1987)
https://doi.org/10.1051/rphysap:01987002204020700