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Article cité :
C. Donolato
J. Phys. Colloques, 44 C4 (1983) C4-269-C4-275
Citations de cet article :
9 articles
Measurement of local recombination activity in high diffusion length semiconductors
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Understanding and optimizing EBIC pn-junction characterization from modeling insights
Ruinan Zhou, Mingzhe Yu, David Tweddle, et al. Journal of Applied Physics 127 (2) (2020) https://doi.org/10.1063/1.5139894
Reference Module in Materials Science and Materials Engineering
C. Frigeri Reference Module in Materials Science and Materials Engineering (2016) https://doi.org/10.1016/B978-0-12-803581-8.03519-0
Encyclopedia of Materials: Science and Technology
C. Frigeri Encyclopedia of Materials: Science and Technology 2557 (2001) https://doi.org/10.1016/B0-08-043152-6/00463-0
A theoretical study of the charge collection contrast of localized semiconductor defects with arbitrary recombination activity
C Donolato Semiconductor Science and Technology 7 (1) 37 (1992) https://doi.org/10.1088/0268-1242/7/1/007
Comment on ‘‘A contribution to the theory of beam-induced current characterization of dislocations’’ [J. Appl. Phys. 69, 6387 (1991)]
C. Donolato Journal of Applied Physics 70 (12) 7657 (1991) https://doi.org/10.1063/1.349680
Electron beam induced current and cathodoluminescence study of the recombination activity of stacking faults and hillocks in hydride vapor phase epitaxy InP
G. Attolini, C. Frigeri, C. Pelosi and G. Salviati Applied Physics Letters 49 (3) 167 (1986) https://doi.org/10.1063/1.97213
On the temperature dependence of the EBIC contrast of dislocations in silicon
C. Donolato Journal de Physique 47 (2) 171 (1986) https://doi.org/10.1051/jphys:01986004702017100
An improved detection system for electrical microcharacterization in a scanning electron microscope
M. Lesniak, B. A. Unvala and D. B. Holt Journal of Microscopy 135 (3) 255 (1984) https://doi.org/10.1111/j.1365-2818.1984.tb02532.x