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Cited article:

ASYMMETRY OF ISOLATED DISLOCATIONS MOBILITY IN Ge AND Si SINGLE CRYSTALS

V.I. Nikitenko, B.Ya. Farber, E.B. Yakimov

J. Phys. Colloques, 44 C4 (1983) C4-85-C4-89

DOI: https://doi.org/10.1051/jphyscol:1983410

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This article has been cited by the following article(s):

Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations

J. L. Demenet, P. Grosbras, H. Garem and J. C. Desoyer
Philosophical Magazine A 59 (3) 501 (1989)
https://doi.org/10.1080/01418618908229781

Dislocation configurations in semi-insulating, n-type and p-type GaAs deformed at 150°C

Bruno C. De Cooman and C. Barry Carter
Philosophical Magazine A 60 (2) 245 (1989)
https://doi.org/10.1080/01418618908219283

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership

F. Louchet and J. Thibault-Desseaux
Revue de Physique Appliquée 22 (4) 207 (1987)
https://doi.org/10.1051/rphysap:01987002204020700