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Cited article:

Stacking Faults-Induced Quenching of the UV Luminescence in ZnO

Brigitte Sieber, Ahmed Addad, Sabine Szunerits and Rabah Boukherroub
The Journal of Physical Chemistry Letters 1 (20) 3033 (2010)
https://doi.org/10.1021/jz101267t

Models of core reconstruction for the 90° partial dislocation in semiconductors

R W Nunes and David Vanderbilt
Journal of Physics: Condensed Matter 12 (49) 10021 (2000)
https://doi.org/10.1088/0953-8984/12/49/301

Core reconstruction of the90°partial dislocation in nonpolar semiconductors

R. W. Nunes, J. Bennetto and David Vanderbilt
Physical Review B 58 (19) 12563 (1998)
https://doi.org/10.1103/PhysRevB.58.12563

Image Simulation of Partial Dislocation Lines Plan-viewed by High Resolution Electron Microscopy

E. Kanematsu, M. Inoue, H. Amasuga, M. Nakamura and K. Maeda
Materials Transactions, JIM 37 (3) 273 (1996)
https://doi.org/10.2320/matertrans1989.37.273

Ab InitioTheory of Dislocation Interactions: From Close-Range Spontaneous Annihilation to the Long-Range Continuum Limit

T. A. Arias and J. D. Joannopoulos
Physical Review Letters 73 (5) 680 (1994)
https://doi.org/10.1103/PhysRevLett.73.680

Atomic and electronic structures of the 90° partial dislocation in silicon

J. R. K. Bigger, D. A. McInnes, A. P. Sutton, et al.
Physical Review Letters 69 (15) 2224 (1992)
https://doi.org/10.1103/PhysRevLett.69.2224

Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership

F. Louchet and J. Thibault-Desseaux
Revue de Physique Appliquée 22 (4) 207 (1987)
https://doi.org/10.1051/rphysap:01987002204020700

Cathodoluminescence scanning electron microscopy of semiconductors

B. G. Yacobi and D. B. Holt
Journal of Applied Physics 59 (4) R1 (1986)
https://doi.org/10.1063/1.336491