STRUCTURE AND ENERGY LEVELS OF DISLOCATIONS IN SILICON
J. Phys. Colloques, 44 C4 (1983) C4-25-C4-35
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https://doi.org/10.1080/14786435.2018.1539565
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https://doi.org/10.1021/jz101267t
Models of core reconstruction for the 90° partial dislocation in semiconductors
R W Nunes and David VanderbiltJournal of Physics: Condensed Matter 12 (49) 10021 (2000)
https://doi.org/10.1088/0953-8984/12/49/301
Atomic structure of dislocation kinks in silicon
R. W. Nunes, J. Bennetto and David VanderbiltPhysical Review B 57 (17) 10388 (1998)
https://doi.org/10.1103/PhysRevB.57.10388
Core reconstruction of the90°partial dislocation in nonpolar semiconductors
R. W. Nunes, J. Bennetto and David VanderbiltPhysical Review B 58 (19) 12563 (1998)
https://doi.org/10.1103/PhysRevB.58.12563
Interaction of vacancies with partial dislocations in silicon
Niklas Lehto and Sven ÖbergPhysical Review B 56 (20) R12706 (1997)
https://doi.org/10.1103/PhysRevB.56.R12706
Period-Doubled Structure for the90°Partial Dislocation in Silicon
J. Bennetto, R. W. Nunes and David VanderbiltPhysical Review Letters 79 (2) 245 (1997)
https://doi.org/10.1103/PhysRevLett.79.245
Image Simulation of Partial Dislocation Lines Plan-viewed by High Resolution Electron Microscopy
E. Kanematsu, M. Inoue, H. Amasuga, M. Nakamura and K. MaedaMaterials Transactions, JIM 37 (3) 273 (1996)
https://doi.org/10.2320/matertrans1989.37.273
Ab InitioTheory of Dislocation Interactions: From Close-Range Spontaneous Annihilation to the Long-Range Continuum Limit
T. A. Arias and J. D. JoannopoulosPhysical Review Letters 73 (5) 680 (1994)
https://doi.org/10.1103/PhysRevLett.73.680
Atomic and electronic structures of the 90° partial dislocation in silicon
J. R. K. Bigger, D. A. McInnes, A. P. Sutton, et al.Physical Review Letters 69 (15) 2224 (1992)
https://doi.org/10.1103/PhysRevLett.69.2224
Dislocation core studies in empirical silicon models
M. S. Duesbery, B. Joos and D. J. MichelPhysical Review B 43 (6) 5143 (1991)
https://doi.org/10.1103/PhysRevB.43.5143
Electron states associated with 90°partial dislocations in germanium
Wang Yong-liangPhysical Review B 40 (8) 5669 (1989)
https://doi.org/10.1103/PhysRevB.40.5669
Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership
F. Louchet and J. Thibault-DesseauxRevue de Physique Appliquée 22 (4) 207 (1987)
https://doi.org/10.1051/rphysap:01987002204020700
Cathodoluminescence scanning electron microscopy of semiconductors
B. G. Yacobi and D. B. HoltJournal of Applied Physics 59 (4) R1 (1986)
https://doi.org/10.1063/1.336491