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Article cité :
N. Vodjdani , A. Lemarchand , H. Paradan
J. Phys. Colloques, 43 C5 (1982) C5-339-C5-349
Citations de cet article :
8 articles
Field effect enhancement in buffered quantum nanowire networks
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Characterization of Ill-V heterostructures grown by selective-area epitaxy using double-crystal X-ray diffractometry with high lateral resolution
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Chemical beam epitaxy — a child of surface science
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H Heinecke Physica Scripta T49B 742 (1993) https://doi.org/10.1088/0031-8949/1993/T49B/062
Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P
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MOMBE growth of high-quality InP and GaInAs bulk, heterojunction and quantum well layers
P Maurel, P Bove, J C Garcia and M Razeghi Semiconductor Science and Technology 5 (6) 638 (1990) https://doi.org/10.1088/0268-1242/5/6/034
Growth of microstructures by molecular beam epitaxy
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