Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Semiconductor Nanowire Light‐Emitting Diodes Grown on Metal: A Direction Toward Large‐Scale Fabrication of Nanowire Devices

ATM Golam Sarwar, Santino D. Carnevale, Fan Yang, et al.
Small 11 (40) 5402 (2015)
https://doi.org/10.1002/smll.201501909

Thermodynamic theory of epitaxial alloys: first-principles mixed-basis cluster expansion of (In, Ga)N alloy film

Jefferson Zhe Liu and Alex Zunger
Journal of Physics: Condensed Matter 21 (29) 295402 (2009)
https://doi.org/10.1088/0953-8984/21/29/295402

Prediction of ordering and spontaneous rotation of epitaxial habits in substrate-coherent InGaN and GaAsSb

Jefferson Zhe Liu, Giancarlo Trimarchi and Alex Zunger
Applied Physics Letters 95 (8) (2009)
https://doi.org/10.1063/1.3200234

Epitaxial deposition of InGaAsP solid solutions in the miscibility gap

L. S. Vavilova, V. A. Kapitonov, A. V. Murashova and I. S. Tarasov
Semiconductors 34 (11) 1255 (2000)
https://doi.org/10.1134/1.1325418

Morphological evolution of In0.26Ga0.74As grown under compression on GaAs(001) and under tension on InP(001)

J.E. Guyer, S.A. Barnett and P.W. Voorhees
Journal of Crystal Growth 217 (1-2) 1 (2000)
https://doi.org/10.1016/S0022-0248(00)00466-8

Effects of anharmonic strain on the phase stability of epitaxial films and superlattices: Applications to noble metals

V. Ozoliņš, C. Wolverton and Alex Zunger
Physical Review B 57 (8) 4816 (1998)
https://doi.org/10.1103/PhysRevB.57.4816

Competitive evolution of the fine contrast modulation and CuPt ordering in InGaP/GaAs layers

A. Diéguez, F. Peiró, A. Cornet, et al.
Journal of Applied Physics 80 (7) 3798 (1996)
https://doi.org/10.1063/1.363332

Compositional elastic domains in epitaxial layers of phase-separating semiconductor alloys

I. P. Ipatova, V. G. Malyshkin and V. A. Shchukin
Philosophical Magazine B 70 (3) 557 (1994)
https://doi.org/10.1080/01418639408240230

Transmission electron microscopy and transmission electron diffraction structural studies of heteroepitaxial InAsySb1−ymolecular‐beam epitaxial layers

Tae‐Yeon Seong, A. G. Norman, I. T. Ferguson and G. R. Booker
Journal of Applied Physics 73 (12) 8227 (1993)
https://doi.org/10.1063/1.353440

On spinodal decomposition in elastically anisotropic epitaxial films of III‐V semiconductor alloys

I. P. Ipatova, V. G. Malyshkin and V. A. Shchukin
Journal of Applied Physics 74 (12) 7198 (1993)
https://doi.org/10.1063/1.355037

Evaluation of Advanced Semiconductor Materials by Electron Microscopy

Michael M. J. Treacy
NATO ASI Series, Evaluation of Advanced Semiconductor Materials by Electron Microscopy 203 255 (1989)
https://doi.org/10.1007/978-1-4613-0527-9_18

Evaluation of Advanced Semiconductor Materials by Electron Microscopy

Andrew G. Norman
NATO ASI Series, Evaluation of Advanced Semiconductor Materials by Electron Microscopy 203 233 (1989)
https://doi.org/10.1007/978-1-4613-0527-9_17

Crystallinity of InGaPAs epitaxial layers revealed in equal thickness fringes in transmission electron microscopy

Masahiko Kondow, Hiroshi Kakibayashi, Taneo Nishino and Yoshihiro Hamakawa
Journal of Applied Physics 65 (7) 2699 (1989)
https://doi.org/10.1063/1.342755

Trapping of carriers in single quantum wells with different configurations of the confinement layers

H.-J. Polland, K. Leo, K. Rother, et al.
Physical Review B 38 (11) 7635 (1988)
https://doi.org/10.1103/PhysRevB.38.7635

Influence of substrate‐induced misfit stresses on the miscibility gap in epitaxial layers: Application to III‐V alloys

F. C. Larché, William C. Johnson, C. S. Chiang and G. Martin
Journal of Applied Physics 64 (10) 5251 (1988)
https://doi.org/10.1063/1.342412

Elastic state and thermodynamical properties of inhomogeneous epitaxial layers: Application to immiscible III-V alloys

Frank Glas
Journal of Applied Physics 62 (8) 3201 (1987)
https://doi.org/10.1063/1.339844

Influence of immiscibility in liquid‐phase epitaxy growth of InGaPAs on GaAs

Masahiko Kondo, Sho Shirakata, Taneo Nishino and Yoshihiro Hamakawa
Journal of Applied Physics 60 (10) 3539 (1986)
https://doi.org/10.1063/1.337608

Effect of alloy clustering on the high-temperature electron mobility in In1−xGaxAsyP1−y

Pallab K. Bhattacharya and Joseph W. Ku
Journal of Applied Physics 58 (3) 1410 (1985)
https://doi.org/10.1063/1.336092

X-ray diffuse scattering by composition waves in GaAlAs

C. Bocchi, P. Franzosi and C. Ghezzi
Journal of Applied Physics 57 (10) 4533 (1985)
https://doi.org/10.1063/1.335354

Transmission electron microscope and transmission electron diffraction observations of alloy clustering in liquid-phase epitaxial (001) GaInAsP layers

A. G. Norman and G. R. Booker
Journal of Applied Physics 57 (10) 4715 (1985)
https://doi.org/10.1063/1.335333

Influence of clustering on the mobility of III-V semiconductor alloys

P. Blood and A. D. C. Grassie
Journal of Applied Physics 56 (6) 1866 (1984)
https://doi.org/10.1063/1.334200