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Cited article:

EFFECT OF OXYGEN PRESSURE ON OXYGEN INCORPORATION IN Si AND Ga As DURING Q SWITCHED LASER IRRADIATION

G.G. Bentini, M . Berti, C. Cohen, A.V. Drigo, E. Iannitti, D. Pribat, J. Siejka

J. Phys. Colloques, 43 C1 (1982) C1-229-C1-234

DOI: https://doi.org/10.1051/jphyscol:1982131

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This article has been cited by the following article(s):

Numerical simulation of the gas immersion laser doping (GILD) process in silicon

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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 7 (2) 205 (1988)
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Nonlinear optical studies and CO2laser‐induced melting of Zn‐doped GaAs

R. B. James, W. H. Christie, R. E. Eby, B. E. Mills and L. S. Darken
Journal of Applied Physics 59 (4) 1323 (1986)
https://doi.org/10.1063/1.336526