GRAIN BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC
J. Phys. Colloques, 43 C1 (1982) C1-187-C1-192
Articles citing this article
The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).
Cited article:
This article has been cited by the following article(s):
Poly-Si passivating contacts prepared via phosphorus spin-on-doping: A comparison between different silicon deposition methods
Jesús Ibarra Michel, Di Yan, Sieu Pheng Phang, Tian Zheng, Brett C. Johnson, Jie Yang, Xinyu Zhang, Wenhao Chen, Yimao Wan, Thien Truong, Josua Stuckelberger, Yida Pan, Daniel Macdonald and James BullockSolar Energy Materials and Solar Cells 255 112290 (2023)
https://doi.org/10.1016/j.solmat.2023.112290
Comparing the Gettering Effect of Heavily Doped Polysilicon Films and Its Implications for Tunnel Oxide‐Passivated Contact Solar Cells
Zhongshu Yang, Jan Krügener, Frank Feldmann, et al.Solar RRL 7 (8) (2023)
https://doi.org/10.1002/solr.202200578
Understanding the Degradation of a Model Si Anode in a Li-Ion Battery at the Atomic Scale
Se-Ho Kim, Kang Dong, Huan Zhao, et al.The Journal of Physical Chemistry Letters 13 (36) 8416 (2022)
https://doi.org/10.1021/acs.jpclett.2c02236
2147 040018 (2019)
https://doi.org/10.1063/1.5123845
Direct Observation of the Impurity Gettering Layers in Polysilicon-Based Passivating Contacts for Silicon Solar Cells
AnYao Liu, Di Yan, Jennifer Wong-Leung, et al.ACS Applied Energy Materials 1 (5) 2275 (2018)
https://doi.org/10.1021/acsaem.8b00367
Detecting Dopant Diffusion Enhancement at Grain Boundaries in Multicrystalline Silicon Wafers With Microphotoluminescence Spectroscopy
Hieu T. Nguyen, Sudha Mokkapati and Daniel MacdonaldIEEE Journal of Photovoltaics 7 (2) 598 (2017)
https://doi.org/10.1109/JPHOTOV.2017.2650561
Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation
Hannes Wagner, Amir Dastgheib-Shirazi, Byungsul Min, et al.Journal of Applied Physics 119 (18) 185704 (2016)
https://doi.org/10.1063/1.4949326
Diffusion and Segregation Model for the Annealing of Silicon Solar Cells Implanted With Phosphorus
F. Alexander Wolf, Alberto Martinez-Limia, Daniela Grote, Daniel Stichtenoth and Peter PichlerIEEE Journal of Photovoltaics 5 (1) 129 (2015)
https://doi.org/10.1109/JPHOTOV.2014.2362358
A mechanistic study of impurity segregation at silicon grain boundaries
Peter Käshammer and Talid SinnoJournal of Applied Physics 118 (9) (2015)
https://doi.org/10.1063/1.4929637
Analysis of thermodynamic properties and phase equilibria in the Si-P system
N. A. Arutyunyan, A. I. Zaitsev and N. G. ShaposhnikovRussian Journal of Physical Chemistry A 85 (6) 911 (2011)
https://doi.org/10.1134/S0036024411060057
Atomic-scale redistribution of dopants in polycrystalline silicon layers
S. Duguay, A. Colin, D. Mathiot, P Morin and D. BlavetteJournal of Applied Physics 108 (3) (2010)
https://doi.org/10.1063/1.3466783
Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon
A. A. Istratov, W. Huber and E. R. WeberApplied Physics Letters 85 (19) 4472 (2004)
https://doi.org/10.1063/1.1819512
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S. Solmi, A. Parisini, R. Angelucci, et al.Physical Review B 53 (12) 7836 (1996)
https://doi.org/10.1103/PhysRevB.53.7836
Electrical measurement of the dopant segregation profile at the grain boundary in silicon bicrystals
A. BroniatowskiJournal of Applied Physics 64 (9) 4516 (1988)
https://doi.org/10.1063/1.341279
Grain boundaries in semiconductors
C R M GrovenorJournal of Physics C: Solid State Physics 18 (21) 4079 (1985)
https://doi.org/10.1088/0022-3719/18/21/008