GRAIN BOUNDARY SEGREGATION IN SILICON HEAVILY DOPED WITH PHOSPHORUS AND ARSENIC
J. Phys. Colloques, 43 C1 (1982) C1-187-C1-192
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https://doi.org/10.1021/acs.jpclett.2c02236
2147 040018 (2019)
https://doi.org/10.1063/1.5123845
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https://doi.org/10.1109/JPHOTOV.2017.2650561
Optimizing phosphorus diffusion for photovoltaic applications: Peak doping, inactive phosphorus, gettering, and contact formation
Hannes Wagner, Amir Dastgheib-Shirazi, Byungsul Min, et al.Journal of Applied Physics 119 (18) 185704 (2016)
https://doi.org/10.1063/1.4949326
Diffusion and Segregation Model for the Annealing of Silicon Solar Cells Implanted With Phosphorus
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https://doi.org/10.1109/JPHOTOV.2014.2362358
A mechanistic study of impurity segregation at silicon grain boundaries
Peter Käshammer and Talid SinnoJournal of Applied Physics 118 (9) (2015)
https://doi.org/10.1063/1.4929637
Analysis of thermodynamic properties and phase equilibria in the Si-P system
N. A. Arutyunyan, A. I. Zaitsev and N. G. ShaposhnikovRussian Journal of Physical Chemistry A 85 (6) 911 (2011)
https://doi.org/10.1134/S0036024411060057
Atomic-scale redistribution of dopants in polycrystalline silicon layers
S. Duguay, A. Colin, D. Mathiot, P Morin and D. BlavetteJournal of Applied Physics 108 (3) (2010)
https://doi.org/10.1063/1.3466783
Experimental evidence for the presence of segregation and relaxation gettering of iron in polycrystalline silicon layers on silicon
A. A. Istratov, W. Huber and E. R. WeberApplied Physics Letters 85 (19) 4472 (2004)
https://doi.org/10.1063/1.1819512
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S. Solmi, A. Parisini, R. Angelucci, et al.Physical Review B 53 (12) 7836 (1996)
https://doi.org/10.1103/PhysRevB.53.7836
Electrical measurement of the dopant segregation profile at the grain boundary in silicon bicrystals
A. BroniatowskiJournal of Applied Physics 64 (9) 4516 (1988)
https://doi.org/10.1063/1.341279
Grain boundaries in semiconductors
C R M GrovenorJournal of Physics C: Solid State Physics 18 (21) 4079 (1985)
https://doi.org/10.1088/0022-3719/18/21/008