Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

STUDY OF LIGHT INDUCED CHANGES IN a-Si:H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS

J.D. Cohen, D.V. Lang, J.P. Harbison, A.M. Sergent

J. Phys. Colloques, 42 C4 (1981) C4-371-C4-374

DOI: https://doi.org/10.1051/jphyscol:1981479

PDF (160.1 KB)

Citations de cet article :

Density of states measurements in a-Si:H and a-Si:H/nc-Si:H multilayer structures prepared by hot wire chemical vapor deposition

Asha Yadav and Pratima Agarwal
Materials Science in Semiconductor Processing 61 5 (2017)
https://doi.org/10.1016/j.mssp.2016.12.033

Experimental studies of the light-induced effects in undoped hydrogenated amorphous silicon as a function of deposition conditions

K. Zellama, H. Labidi, P. Germain, et al.
Thin Solid Films 204 (2) 385 (1991)
https://doi.org/10.1016/0040-6090(91)90077-B

Microscopic model of the Staebler-Wronski effect in intrinsic amorphous hydrogenated silicon

L. E. Mosley, M. A. Paesler and I. Shimizu
Philosophical Magazine B 51 (3) L27 (1985)
https://doi.org/10.1080/13642818508240570

Kinetics of the metastable optically induced ESR ina-Si:H

Charles Lee, W. D. Ohlsen, P. C. Taylor, H. S. Ullal and G. P. Ceasar
Physical Review B 31 (1) 100 (1985)
https://doi.org/10.1103/PhysRevB.31.100

Studies of the frequency-dependent admittances of Schottky barriers formed on sputtered hydrogenated amorphous silicon

I. G. Gibb and A. R. Long
Philosophical Magazine B 49 (6) 565 (1984)
https://doi.org/10.1080/13642818408227646