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Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering

Bénédicte Demaurex, Stefaan De Wolf, Antoine Descoeudres, Zachary Charles Holman and Christophe Ballif
Applied Physics Letters 101 (17) (2012)
https://doi.org/10.1063/1.4764529

Defect creation by 10‐keV electron irradiation in phosphorous‐dopeda‐Si:H

Suvarna Babras, V. G. Bhide, N. R. Rajopadhye and S. V. Bhoraskar
Journal of Applied Physics 67 (6) 2800 (1990)
https://doi.org/10.1063/1.345446

Electrical conductivity of electron-irradiated hydrogenated amorphous silicon

B. G. Yacobi and B. von Roedern
Journal of Applied Physics 59 (7) 2590 (1986)
https://doi.org/10.1063/1.337009

Decay of the electron-beam-induced current in hydrogenated amorphous silicon devices

B. G. Yacobi, C. R. Herrington and R. J. Matson
Journal of Applied Physics 56 (2) 557 (1984)
https://doi.org/10.1063/1.333947

Electron-beam-induced information storage in hydrogenated amorphous silicon devices

B. G. Yacobi
Applied Physics Letters 44 (7) 695 (1984)
https://doi.org/10.1063/1.94881

Limitations to the application of the electron-beam-induced current in hydrogen-passivated silicon grain boundaries

B. G. Yacobi, R. J. Matson, C. R. Herrington and Y. S. Tsuo
Journal of Applied Physics 56 (10) 3011 (1984)
https://doi.org/10.1063/1.333777

Reactive sputtering of amorphous silicon in Ne, Ar, and Kr

R. C. Ross and R. Messier
Journal of Applied Physics 54 (10) 5744 (1983)
https://doi.org/10.1063/1.331797