SUB-GAP AND BAND EDGE OPTICAL ABSORPTION IN a-Si:H BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
J. Phys. Colloques, 42 C4 (1981) C4-293-C4-296
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Handbook of Optical Constants of Solids
Andreas MandelisHandbook of Optical Constants of Solids 59 (1997)
https://doi.org/10.1016/B978-012544415-6.50099-6
Gap-states distribution of ion-implanted Si and GaAs from subgap absorption measurements
U. Zammit, M. Marinelli, R. Pizzoferrato and F. MercuriPhysical Review B 46 (12) 7515 (1992)
https://doi.org/10.1103/PhysRevB.46.7515
Defect formation ina-Si:H
K. WinerPhysical Review B 41 (17) 12150 (1990)
https://doi.org/10.1103/PhysRevB.41.12150
The defect density in amorphous silicon
M. StutzmannPhilosophical Magazine B 60 (4) 531 (1989)
https://doi.org/10.1080/13642818908205926
Defect equilibria in undopeda-Si:H
R. A. Street and K. WinerPhysical Review B 40 (9) 6236 (1989)
https://doi.org/10.1103/PhysRevB.40.6236
a-Si:H gap states investigated by CPM and SCLC
J. Kocka, M. Vanecek and F. SchauerJournal of Non-Crystalline Solids 97-98 715 (1987)
https://doi.org/10.1016/0022-3093(87)90169-4
Drift mobility of dopeda-Si:H at high temperatures
J. Takada and H. FritzschePhysical Review B 36 (3) 1710 (1987)
https://doi.org/10.1103/PhysRevB.36.1710
Photoinduced change in the density of localized states near the conduction band of dopeda-Si:H
J. Takada and H. FritzschePhysical Review B 36 (3) 1706 (1987)
https://doi.org/10.1103/PhysRevB.36.1706
The density of states in undoped and doped amorphous hydrogenated silicon
Jan KočkaJournal of Non-Crystalline Solids 90 (1-3) 91 (1987)
https://doi.org/10.1016/S0022-3093(87)80389-7
Some properties of hydrogenated amorphous silicon produced by direct reaction of silicon and hydrogen atoms
R. E. Viturro and K. WeiserPhilosophical Magazine B 53 (2) 93 (1986)
https://doi.org/10.1080/13642818608238977
Determination of low absorption coefficients from absorptance measurements on thin films
K. Driss-Khodja, A. Gheorghiu and M.-L. TheyeOptics Communications 55 (3) 169 (1985)
https://doi.org/10.1016/0030-4018(85)90040-9
Kinetics of the metastable optically induced ESR ina-Si:H
Charles Lee, W. D. Ohlsen, P. C. Taylor, H. S. Ullal and G. P. CeasarPhysical Review B 31 (1) 100 (1985)
https://doi.org/10.1103/PhysRevB.31.100
Role of dangling-bond defects in early recombination in hydrogenated amorphous silicon
Douglas R. Wake and Nabil M. AmerPhysical Review B 27 (4) 2598 (1983)
https://doi.org/10.1103/PhysRevB.27.2598
Photogeneration and geminate recombination in amorphous silicon
F. Carasco and W. E. SpearPhilosophical Magazine B 47 (5) 495 (1983)
https://doi.org/10.1080/13642812.1983.11643259