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Article cité :

Phase change memory materials and their applications

S. A. Kozyukhin, P. I. Lazarenko, A. I. Popov and I. L. Eremenko
Russian Chemical Reviews 91 (9) RCR5033 (2022)
https://doi.org/10.1070/RCR5033

Thermo-induced changes in the optical linearity and nonlinearity of Dy doped (GeSe2)80(Sb2Se3)20 thin films

Sunanda Sharda, Ekta Sharma, K. A. Aly, A. Dahshan and Pankaj Sharma
Optical and Quantum Electronics 54 (4) (2022)
https://doi.org/10.1007/s11082-022-03653-4

AC conductivity and dielectric relaxation of Se80−xTe20Bix (x=6, 12) glasses

Deepika Deepika and Hukum Singh
Physics and Chemistry of Glasses: European Journal of Glass Science and Technology Part B 60 (6) 222 (2019)
https://doi.org/10.13036/17533562.60.6.014

Phase-change materials: The view from the liquid phase and the metallicity parameter

Shuai Wei, Pierre Lucas and C. Austen Angell
MRS Bulletin 44 (9) 691 (2019)
https://doi.org/10.1557/mrs.2019.207

Glass Transitions, Semiconductor-Metal Transitions, and Fragilities in Ge−V−Te ( V=As , Sb) Liquid Alloys: The Difference One Element Can Make

Shuai Wei, Garrett J. Coleman, Pierre Lucas and C. Austen Angell
Physical Review Applied 7 (3) (2017)
https://doi.org/10.1103/PhysRevApplied.7.034035

Effect of Sb addition on linear and non-linear optical properties of amorphous Ge–Se–Sn thin films

Navjeet Sharma, Surbhi Sharma, Amit Sarin and Rajesh Kumar
Optical Materials 51 56 (2016)
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Improvement of reliability and speed of phase change memory devices with N7.9(Ge46.9Bi7.2Te45.9) films

J. H. Park, S.-W. Kim, J. H. Kim, et al.
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Calorimetric study of specific heat in glassy Se–Te–Sn–Bi system using MDSC technique: effect of Bi incorporation

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Effect of Bi incorporation on the glass transition kinetics of Se85Te15 glassy alloy

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Optical and electrical studies of as-prepared and annealed Se-Te-Bi thin films

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Applied Physics A 90 (1) 149 (2007)
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Optical properties and structure of unhydrogenated, hydrogenated, and zinc-alloyed a-GexSe1-x films prepared by radio-frequency sputtering

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Space charge limited conduction in a-Ge22Se68M10 (M = Cd,ln,Pb,Te)

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Carrier-sign reversal in Bi-doped bulk amorphous semiconductorsGe20Te80−xBix

K. L. Bhatia, G. Parthasarathy, Ashwani Sharma and E. S. R. Gopal
Physical Review B 38 (9) 6342 (1988)
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The X-ray K absorption edges of Ge and Se in Ge22Se78−x Bi x glasses and amorphous films

A. K. Agnihotri, A. Kumar and A. N. Nigam
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A model for the chemical modification of electrical properties of chalcogenide glasses by bismuth

S R Elliott and A T Steel
Journal of Physics C: Solid State Physics 20 (27) 4335 (1987)
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Study of impurity induced modifications in amorphous N-type (GeSe3·5)100−x Bi x using high pressure technique

KL Bhatia, G Parthasarathy and ESR Gopal
Bulletin of Materials Science 7 (5) 423 (1985)
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Pressure-induced structural transformations in Bi-doped amorphous germanium sulfide

D. P. Gosain, K. L. Bhatia, G. Parthasarathy and E. S. R. Gopal
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