THERMAL AND OPTICAL SPACE CHARGE SPECTROSCOPY OF GAP STATES IN a-Si:H
J. Phys. Colloques, 42 C4 (1981) C4-605-C4-608
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Analysis of thermally stimulated currents in amorphous silicon
D. Misra, Vijay Singh and S. AgarwalPhysical Review B 32 (6) 4052 (1985)
https://doi.org/10.1103/PhysRevB.32.4052
Admittance frequency dependence of Schottky barriers formed on dc triode sputtered amorphous silicon: Hydrogen influence on deep gap state characteristics
D. Mencaraglia, A. Amaral and J. P. KleiderJournal of Applied Physics 58 (3) 1292 (1985)
https://doi.org/10.1063/1.336097
Thermostimulated conductivity in amorphous semiconductors
H. Fritzsche and N. IbarakiPhilosophical Magazine B 52 (3) 299 (1985)
https://doi.org/10.1080/13642818508240602
Study of the distribution of localized states in a-Si:Husing the thermally-stimulated-currents technique
D. S. Misra, A. Kumar and S. C. AgarwalPhysical Review B 31 (2) 1047 (1985)
https://doi.org/10.1103/PhysRevB.31.1047
Photoluminescence in hydrogenated amorphous silicon
D. J. Dunstan and F. BoulitropPhysical Review B 30 (10) 5945 (1984)
https://doi.org/10.1103/PhysRevB.30.5945
Thermally stimulated currents in a-Si: H
D. S. Misra, A. Kumar and S. C. AgarwalPhilosophical Magazine B 49 (6) L69 (1984)
https://doi.org/10.1080/13642818408227642
Non-geminate recombination in amorphous silicon
F. Boulitrop and D.J. DunstanSolid State Communications 44 (6) 841 (1982)
https://doi.org/10.1016/0038-1098(82)90286-1