DEFECTS IN AMORPHOUS CHALCOGENIDES AND SILICON
J. Phys. Colloques, 42 C4 (1981) C4-3-C4-14
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https://doi.org/10.1002/pssa.200982876
Light-induced modification of a-SiOx:H. I: Metastability
Andreas Janotta, Yavuz Dikce, Susanne Linder, et al.Journal of Applied Physics 95 (8) 4046 (2004)
https://doi.org/10.1063/1.1667007
Density of States in Tritiated Amorphous Silicon Measured Using CPM
Simone Pisana, Stefan Costea, Tome Kosteski, et al.MRS Proceedings 836 (2004)
https://doi.org/10.1557/PROC-836-L8.9
Hydrogen collision model: Quantitative description of metastability in amorphous silicon
Howard M. BranzPhysical Review B 59 (8) 5498 (1999)
https://doi.org/10.1103/PhysRevB.59.5498
Experimental evidence of boron induced charged defects in amorphous silicon materials
D Caputo, G de Cesare, A Nascetti and F PalmaThin Solid Films 348 (1-2) 79 (1999)
https://doi.org/10.1016/S0040-6090(99)00034-6
Kinetic model for photoinduced and thermally induced creation and annihilation of metastable defects in hydrogenated amorphous silicon
I. AbdulhalimJournal of Applied Physics 77 (5) 1897 (1995)
https://doi.org/10.1063/1.358820
The structure of light-induced metastable defects in a-Si:H
H. FritzscheJournal of Non-Crystalline Solids 190 (1-2) 180 (1995)
https://doi.org/10.1016/0022-3093(95)00272-3
Observation by infrared transmission spectroscopy and infrared ellipsometry of a new hydrogen bond during light-soaking of a-Si:H
R. Darwich, P. Roca I Cabarrocas, S. Vallon, et al.Philosophical Magazine B 72 (3) 363 (1995)
https://doi.org/10.1080/13642819508239090
Evidence of Energy Relaxation of Charged Defects in Amorphous Silicon Via Forward Bias Capacitance Measurements
D. Caputo, G. de Cesare, G. Masini, et al.MRS Proceedings 336 (1994)
https://doi.org/10.1557/PROC-336-201
Light-induced effects and stability in a-Si:H and related alloys
Tatsuo ShimizuJournal of Non-Crystalline Solids 164-166 163 (1993)
https://doi.org/10.1016/0022-3093(93)90517-2
Origin of photoinduced metastable defects in amorphous chalcogenides
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https://doi.org/10.1103/PhysRevB.46.10062
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https://doi.org/10.1557/PROC-258-335
Molecular-dynamics simulations of defect formation in hydrogenated amorphous silicon
I. Kwon, R. Biswas and C. M. SoukoulisPhysical Review B 45 (7) 3332 (1992)
https://doi.org/10.1103/PhysRevB.45.3332
Atomistic origins of light-induced defects ina-Si
P. A. Fedders, Y. Fu and D. A. DraboldPhysical Review Letters 68 (12) 1888 (1992)
https://doi.org/10.1103/PhysRevLett.68.1888
Anion and cation absorption spectra of conjugated oligomers and polymers
M. Deussen and H. BässlerChemical Physics 164 (2) 247 (1992)
https://doi.org/10.1016/0301-0104(92)87148-3
Systematic study of light-induced effects in hydrogenated amorphous silicon
K. Zellama, H. Labidi, P. Germain, et al.Physical Review B 45 (23) 13314 (1992)
https://doi.org/10.1103/PhysRevB.45.13314
Assessment of Weak Si-Si Bond Breaking Mechanisms of the Staebler-Wronski Effect
R. Biswas, I. Kwon and C. M. SoukoulisMRS Proceedings 219 (1991)
https://doi.org/10.1557/PROC-219-99
Mechanism for the Staebler-Wronski effect ina-Si:H
R. Biswas, I. Kwon and C. M. SoukoulisPhysical Review B 44 (7) 3403 (1991)
https://doi.org/10.1103/PhysRevB.44.3403
Molecular-dynamics simulations of the stability of amorphous silicon
I. Kwon, R. Biswas and C. M. SoukoulisPhysical Review B 43 (2) 1859 (1991)
https://doi.org/10.1103/PhysRevB.43.1859
Experimental studies of the light-induced effects in undoped hydrogenated amorphous silicon as a function of deposition conditions
K. Zellama, H. Labidi, P. Germain, et al.Thin Solid Films 204 (2) 385 (1991)
https://doi.org/10.1016/0040-6090(91)90077-B
Relaxation kinetics in hydrogenated amorphous silicon
R. Könenkamp and E. WildPhysical Review B 42 (9) 5887 (1990)
https://doi.org/10.1103/PhysRevB.42.5887
Reduced light‐induced changes of photoconductivity in duterated amorphous silicon
G. Ganguly, A. Suzuki, S. Yamasaki, K. Nomoto and A. MatsudaJournal of Applied Physics 68 (7) 3738 (1990)
https://doi.org/10.1063/1.346288
Light-induced defect studies in hydrogenated amorphous silicon by exoelectron emission
R. S. Bhide, V. Manorama, S. K. Pawar, et al.Applied Physics Letters 57 (15) 1528 (1990)
https://doi.org/10.1063/1.103342
Spatially resolved and energy-resolved defect kinetics ina-Si:H: A comprehensive study by phase-shift analysis of modulated photocurrents
G. Schumm and G. H. BauerPhysical Review B 39 (8) 5311 (1989)
https://doi.org/10.1103/PhysRevB.39.5311
Microscopic nature of coordination defects in amorphous silicon
Martin Stutzmann and David K. BiegelsenPhysical Review B 40 (14) 9834 (1989)
https://doi.org/10.1103/PhysRevB.40.9834
Stability Studies on A-Si:H Films
Vikram L. Dalal and Camille FuleihanMRS Proceedings 149 (1989)
https://doi.org/10.1557/PROC-149-601
Safe hole trap conversion properties and microscopic models
T.J. McMahon and R.S. CrandallJournal of Non-Crystalline Solids 114 615 (1989)
https://doi.org/10.1016/0022-3093(89)90667-4
Drift mobility under single and double injection in hydrogenated amorphous silicon
L. Xu, G. Winborne, M. Silver, V. Cannella and J. McgillPhilosophical Magazine B 57 (6) 715 (1988)
https://doi.org/10.1080/13642818808208488
Gap State Distribution and Interface States in a-Si:H and a-SiGe:H by Modulated Photocurrent
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https://doi.org/10.1557/PROC-118-543
Sweep-out experiments: A new spectroscopy for the electronic density of states in doped semiconductors
Howard M. Branz, Marvin Silver and David AdlerPhilosophical Magazine B 57 (2) 271 (1988)
https://doi.org/10.1080/13642818808201620
The electron mobility in amorphous silicon under double injection
D. Goldie, P. G. Le Comber and W. E. SpearPhilosophical Magazine Letters 58 (2) 107 (1988)
https://doi.org/10.1080/09500838808214740
Gap-state distribution in a-Si:H by modulated photocurrent: Shallow-state-deep-state conversion and temperature shift of the electron-transport path
G. Schumm, K. Nitsch and G. H. BauerPhilosophical Magazine B 58 (4) 411 (1988)
https://doi.org/10.1080/13642818808218383
Temperature dependence of photodegradation in amorphous hydrogenated silicon
Y. M. Sun, W. Krühler, C. E. Nebel and G. H. BauerApplied Physics A 46 (1) 5 (1988)
https://doi.org/10.1007/BF00615129
Transient photocurrent study of the dangling bond centre in undoped amorphous silicon
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https://doi.org/10.1080/13642818808205720
154 (1988)
https://doi.org/10.1109/PVSC.1988.105678
Weak bond-dangling bond conversion in amorphous silicon
Martin StutzmannPhilosophical Magazine B 56 (1) 63 (1987)
https://doi.org/10.1080/13642818708211224
Physics and Technology of Solar Energy
David AdlerPhysics and Technology of Solar Energy 121 (1987)
https://doi.org/10.1007/978-94-009-3941-7_7
Band tails, entropy, and equilibrium defects in hydrogenated amorphous silicon
Z Smith and S. WagnerPhysical Review Letters 59 (6) 688 (1987)
https://doi.org/10.1103/PhysRevLett.59.688
Electronic structure of hydrogenated amorphous silicon
David AdlerJournal of Non-Crystalline Solids 90 (1-3) 77 (1987)
https://doi.org/10.1016/S0022-3093(87)80388-5
Disordered Semiconductors
Jacques I. PankoveDisordered Semiconductors 625 (1987)
https://doi.org/10.1007/978-1-4613-1841-5_66
Instability mechanism in hydrogenated amorphous silicon thin‐film transistors
R. E. I. Schropp and J. F. VerweyApplied Physics Letters 50 (4) 185 (1987)
https://doi.org/10.1063/1.97656
Photocapacitance characteristics of amorphous-silicon Schottky diode sensor arrays and their changes due to the Staebler–Wronski effect
Wolfgang Hanrieder, Gerhard Mader and Hans MeixnerJournal of Applied Physics 61 (2) 585 (1987)
https://doi.org/10.1063/1.338209
Detailed investigation of doping in hydrogenated amorphous silicon and germanium
M. Stutzmann, D. K. Biegelsen and R. A. StreetPhysical Review B 35 (11) 5666 (1987)
https://doi.org/10.1103/PhysRevB.35.5666
Laser-induced chemical vapor deposition of hydrogenated amorphous silicon. II. Film properties
M. Meunier, J. H. Flint, J. S. Haggerty and D. AdlerJournal of Applied Physics 62 (7) 2822 (1987)
https://doi.org/10.1063/1.339413
Disordered Semiconductors
M. Stutzmann, W. B. Jackson, R. A. Street and D. K. BiegelsenDisordered Semiconductors 407 (1987)
https://doi.org/10.1007/978-1-4613-1841-5_45
Transient field-effect and time-of-flight investigation of chalcogenide glasses
Babar A. Khan, David Adler and Stephen D. SenturiaJournal of Applied Physics 60 (8) 2875 (1986)
https://doi.org/10.1063/1.337072
Light‐induced degradation and thermal recovery of the photoconductivity in hydrogenated amorphous silicon films
E. EserJournal of Applied Physics 59 (10) 3508 (1986)
https://doi.org/10.1063/1.336822
Strong electron-phonon coupling in defect luminescence in P-dopeda-Si:H
M. Tajima, H. Okushi, S. Yamasaki and K. TanakaPhysical Review B 33 (12) 8522 (1986)
https://doi.org/10.1103/PhysRevB.33.8522
Isothermal and adiabatic thermoelastic effects in a metallic glass
O. B. WrightPhilosophical Magazine B 53 (6) 477 (1986)
https://doi.org/10.1080/13642818608240662
Transport and the electronic structure of hydrogenated amorphous silicon
M. Silver, D. Adler, M. P. Shaw and V. CannellaPhilosophical Magazine B 53 (4) L89 (1986)
https://doi.org/10.1080/01418638608244285
Gap states in hydrogenated amorphous silicon The origins of the light-induced ESR and the low-energy luminescence
K. Morigaki and M. YoshidaPhilosophical Magazine B 52 (3) 289 (1985)
https://doi.org/10.1080/13642818508240601
Method for Direct Determination of the Effective Correlation Energy of Defects in Semiconductors: Optical Modulation Spectroscopy of Dangling Bonds
Z. Vardeny and J. TaucPhysical Review Letters 54 (16) 1844 (1985)
https://doi.org/10.1103/PhysRevLett.54.1844
Positron-annihilation study of the structure of pure and hydrogenated amorphous silicon
Ai-Lien Jung, Li-Qing Shi, Gang Liu, et al.Journal of Non-Crystalline Solids 77-78 221 (1985)
https://doi.org/10.1016/0022-3093(85)90643-X
Defects and microvoids in a-Si and a-Si:H
Ai-Lien Jung, Yi-Hua Wang, Gang Liu, et al.Journal of Non-Crystalline Solids 74 (1) 19 (1985)
https://doi.org/10.1016/0022-3093(85)90396-5
Infrared investigations of hydrogenated amorphous silicon. I. Inductive spectral shifts as predicted from monomer data
E. SacherPhilosophical Magazine B 51 (3) 285 (1985)
https://doi.org/10.1080/13642818508240574
Calculation of the extended-state electron mobility in hydrogenated amorphous silicon
M. Silver, E. Snow and David AdlerSolid State Communications 54 (1) 15 (1985)
https://doi.org/10.1016/0038-1098(85)91023-3
Semiconducting glasses
David AdlerJournal of Non-Crystalline Solids 73 (1-3) 205 (1985)
https://doi.org/10.1016/0022-3093(85)90347-3
Theory of defect formation in the glow-discharge deposition of phosphorus-doped hydrogenated amorphous silicon
F. Kampas and P. VanierPhysical Review B 31 (6) 3654 (1985)
https://doi.org/10.1103/PhysRevB.31.3654
Influence of stress on light‐induced effects in amorphous silicon alloys
S. Guha, W. den Boer, S. C. Agarwal and M. HackApplied Physics Letters 47 (9) 947 (1985)
https://doi.org/10.1063/1.95938
Physics of Disordered Materials
David AdlerPhysics of Disordered Materials 287 (1985)
https://doi.org/10.1007/978-1-4613-2513-0_24
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study
M. Stutzmann, W. B. Jackson and C. C. TsaiPhysical Review B 32 (1) 23 (1985)
https://doi.org/10.1103/PhysRevB.32.23
Defects in amorphous semiconductors
J. RobertsonPhilosophical Magazine B 51 (2) 183 (1985)
https://doi.org/10.1080/13642818508240562
Charge transport in molecularly doped polymers
H. BässlerPhilosophical Magazine B 50 (3) 347 (1984)
https://doi.org/10.1080/13642818408238860
Theory of non-equilibrium diffusive transport in disordered materials
M. Grünewald, B. Pohlmann, B. Movaghar and D. WürtzPhilosophical Magazine B 49 (4) 341 (1984)
https://doi.org/10.1080/13642818408246522
Annealing behavior of light-induced defects in hydrogenated amorphous silicon alloys
S. Guha, C. -Y. Huang and S. J. HudgensApplied Physics Letters 45 (1) 50 (1984)
https://doi.org/10.1063/1.95001
Transport in hydrogenated amorphous silicon
Finley R. Shapiro and David AdlerJournal of Non-Crystalline Solids 66 (1-2) 303 (1984)
https://doi.org/10.1016/0022-3093(84)90336-3
Failure of reciprocity in light-induced changes in hydrogenated amorphous silicon alloys
S. GuhaApplied Physics Letters 45 (5) 569 (1984)
https://doi.org/10.1063/1.95283
On the measurement of densities of states in amorphous semiconductors
V. HalpernPhilosophical Magazine B 49 (5) L57 (1984)
https://doi.org/10.1080/13642818408227652
Frequency-resolved spectroscopy and its application to the analysis of recombination in semiconductors
S. P. Depinna and D. J. DunstanPhilosophical Magazine B 50 (5) 579 (1984)
https://doi.org/10.1080/13642818408238880
Energy distribution of light-induced gap states in hydrogenated amorphous-silicon alloys
S. Guha, C.-Y. Huang and S. J. HudgensPhysical Review B 29 (10) 5995 (1984)
https://doi.org/10.1103/PhysRevB.29.5995
Radiation and Thermal-Induced Defects in Amorphous As4Se3Te3
M F Kotkata, M H El-Fouly and M A MorsyPhysica Scripta 29 (5) 508 (1984)
https://doi.org/10.1088/0031-8949/29/5/017
Electronic structure of amorphous arsenic telluride
Babar A. Khan, Peiguong Bai and David AdlerJournal of Non-Crystalline Solids 66 (1-2) 321 (1984)
https://doi.org/10.1016/0022-3093(84)90339-9
On the transport mechanism in chalcogenide glasses
H. Overhof and W. BeyerPhilosophical Magazine B 49 (1) L9 (1984)
https://doi.org/10.1080/13642818408246493
One-electron density of states in chalcogenide glasses
P. NagyPhilosophical Magazine B 49 (5) 481 (1984)
https://doi.org/10.1080/13642818408227656
Time-dependent field effect in amorphous chalcogenides
C. Bulloch, J. M. Marshall and C. MainPhilosophical Magazine B 47 (5) L69 (1983)
https://doi.org/10.1080/13642812.1983.11643268
Effective correlation energy of the dangling bond in amorphous silicon
David Adler and Finley R. ShapiroPhysica B+C 117-118 932 (1983)
https://doi.org/10.1016/0378-4363(83)90698-8
Theory of doping in chalcogenide glasses
Peter NagyPhilosophical Magazine B 48 (1) 47 (1983)
https://doi.org/10.1080/13642818308226430
Deep-level spectroscopy of reactively sputtered a-Si:H films
Ai-Lien Jung, Jin-Shen Luo, Xi Yao, et al.Journal of Non-Crystalline Solids 57 (2) 241 (1983)
https://doi.org/10.1016/0022-3093(83)90057-1
Dispersive transport in amorphous arsenic telluride
Babar A. Khan, Peiguong Bai, Ai-Lien Jung and David AdlerJournal of Non-Crystalline Solids 59-60 1007 (1983)
https://doi.org/10.1016/0022-3093(83)90337-X
Photo-induced changes of a.c. conduction in amorphous chalcogenides and hydrogenated silicon
K. Shimakawa, A. Watanabe, Y. Yano and A. KondoJournal of Non-Crystalline Solids 59-60 1023 (1983)
https://doi.org/10.1016/0022-3093(83)90341-1
Annealing and light induced changes in the field effect conductance of amorphous silicon
M. J. Powell, B. C. Easton and D. H. NichollsJournal of Applied Physics 53 (7) 5068 (1982)
https://doi.org/10.1063/1.331339
Chemistry and physics of amorphous semiconductors
David AdlerNaturwissenschaften 69 (12) 574 (1982)
https://doi.org/10.1007/BF00396353
Is amorphous silicon played out?
J. I. B. WilsonNature 295 (5849) 458 (1982)
https://doi.org/10.1038/295458a0
Bipolaron and single-polaron contributions to a.c. conduction in r.f. sputtered SiO2 films
R. Meaudre and M. MeaudrePhilosophical Magazine B 46 (6) 647 (1982)
https://doi.org/10.1080/01418638208223550
Laser-stimulated conductivity of amorphous germanium films
M. Failly-Lovato, R. Andrew, L. D. Laude and M. WauteletApplied Physics A Solids and Surfaces 29 (3) 163 (1982)
https://doi.org/10.1007/BF00617774
Theoretical models for the electronic structures of hydrogenated amorphous silicon. II. Three-center bonds
M. E. Eberhart, K. H. Johnson and D. AdlerPhysical Review B 26 (6) 3138 (1982)
https://doi.org/10.1103/PhysRevB.26.3138