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This article has been cited by the following article(s):
Fine structure of metal–insulator transition in EuO resolved by doping engineering
Dmitry V Averyanov, Oleg E Parfenov, Andrey M Tokmachev, Igor A Karateev, Oleg A Kondratev, Alexander N Taldenkov, Mikhail S Platunov, Fabrice Wilhelm, Andrei Rogalev and Vyacheslav G Storchak Nanotechnology 29(19) 195706 (2018) https://doi.org/10.1088/1361-6528/aab16e
Anomalous Hall effect in the prospective spintronic material Eu1−xGdxO integrated with Si
Oleg E Parfenov, Dmitry V Averyanov, Andrey M Tokmachev, Alexander N Taldenkov and Vyacheslav G Storchak Journal of Physics: Condensed Matter 28(22) 226001 (2016) https://doi.org/10.1088/0953-8984/28/22/226001
Growth and characterization of Sc-doped EuO thin films