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Article cité :
P.M. Petroff
J. Phys. Colloques, 40 C6 (1979) C6-201-C6-205
Citations de cet article :
8 articles
Diffusion and Defect Phenomena in III-V Semiconductors and their Investigation by Transmission Electron Microscopy
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The Multiple Roles of Small-Angle Tilt Grain Boundaries in Annihilating Radiation Damage in SiC
Hao Jiang, Xing Wang and Izabela Szlufarska Scientific Reports 7 (1) (2017) https://doi.org/10.1038/srep42358
Climb of edge dislocations in plastically deformed GaP
G. Wagner, P. Paufler and P. Rotsch Philosophical Magazine A 60 (4) 507 (1989) https://doi.org/10.1080/01418618908213875
Development of a scanning minority-carrier transient spectroscopy technique with optical injection and full transient analysis
T. Heiser, A. Mesli, E. Courcelle and P. Siffert Journal of Applied Physics 64 (8) 4031 (1988) https://doi.org/10.1063/1.342468
Annealing results on low‐energy proton‐irradiated GaAs solar cells
R. Kachare, B. E. Anspaugh and L. O’Meara Journal of Applied Physics 64 (9) 4720 (1988) https://doi.org/10.1063/1.341187
Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics
A. George and J. Rabier Revue de Physique Appliquée 22 (9) 941 (1987) https://doi.org/10.1051/rphysap:01987002209094100
Spatial resolution and nature of defects produced by low‐energy proton irradiation of GaAs solar cells
R. Kachare and B. E. Anspaugh Applied Physics Letters 49 (21) 1459 (1986) https://doi.org/10.1063/1.97302
On the point and line defects which are common to both degraded light emitting diodes and plastically deformed GaAs
Zuzanna Liliental Journal of Applied Physics 54 (4) 2097 (1983) https://doi.org/10.1063/1.332260