EPR OF DISLOCATIONS IN SILICON
J. Phys. Colloques, 40 C6 (1979) C6-101-C6-106
Article cité par
La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).
Article cité :
Citations de cet article :
Structural damage in thin SLIM-Cut c-Si foils fabricated for solar cell purposes: atomic assessment by electron spin resonance
J Kepa, R Martini and A StesmansSemiconductor Science and Technology 30 (11) 115015 (2015)
https://doi.org/10.1088/0268-1242/30/11/115015
Influence of deep defects on device performance of thin-film polycrystalline silicon solar cells
M. Fehr, P. Simon, T. Sontheimer, et al.Applied Physics Letters 101 (12) (2012)
https://doi.org/10.1063/1.4754609
Comparative electron spin resonance study of epi-Lu2O3/(111)Si and a-Lu2O3/(100)Si interfaces: Misfit point defects
P. Somers, A. Stesmans, V. V. Afanas’ev, et al.Journal of Applied Physics 107 (9) (2010)
https://doi.org/10.1063/1.3326516
Misfit point defects at the epitaxial Lu2O3/(111)Si interface revealed by electron spin resonance
A. Stesmans, P. Somers, V. V. Afanas’ev, et al.Applied Physics Letters 93 (10) 103505 (2008)
https://doi.org/10.1063/1.2974793
Dislocations in diamond: Core structures and energies
A. T. Blumenau, M. I. Heggie, C. J. Fall, R. Jones and T. FrauenheimPhysical Review B 65 (20) (2002)
https://doi.org/10.1103/PhysRevB.65.205205
Dislocations as electrically active centres in semiconductors half a century from the discovery
Tadeusz FigielskiJournal of Physics: Condensed Matter 14 (48) 12665 (2002)
https://doi.org/10.1088/0953-8984/14/48/301
Paramagnetic Structure of the Soliton of the 30° Partial Dislocation in Silicon
Gábor Csányi, Sohrab Ismail-Beigi and T. A. AriasPhysical Review Letters 80 (18) 3984 (1998)
https://doi.org/10.1103/PhysRevLett.80.3984
Extension of the Kadic̀-Edelen gauge model: Electronic properties of defect systems
V.A. OsipovPhysica A: Statistical Mechanics and its Applications 175 (3) 369 (1991)
https://doi.org/10.1016/0378-4371(91)90238-8
Electron Spin Resonance Study of Deformation-Induced Si–K1 Centers in Silicon
Masashi Suezawa and Koji SuminoJournal of the Physical Society of Japan 58 (7) 2463 (1989)
https://doi.org/10.1143/JPSJ.58.2463
Dislocation cores in semiconductors. From the « shuffle or glide » dispute to the « glide and shuffle » partnership
F. Louchet and J. Thibault-DesseauxRevue de Physique Appliquée 22 (4) 207 (1987)
https://doi.org/10.1051/rphysap:01987002204020700
Electron paramagnetic resonance of plastically deformed semiconductors : a short review
A. GoltzenéRevue de Physique Appliquée 22 (6) 469 (1987)
https://doi.org/10.1051/rphysap:01987002206046900
Defect states inp‐type silicon crystals induced by plastic deformation
Haruhiko Ono and Koji SuminoJournal of Applied Physics 57 (2) 287 (1985)
https://doi.org/10.1063/1.334802
Electrical properties of dislocations and point defects in plastically deformed silicon
P. Omling, E. R. Weber, L. Montelius, H. Alexander and J. MichelPhysical Review B 32 (10) 6571 (1985)
https://doi.org/10.1103/PhysRevB.32.6571
Calculation of the localized electronic states associated with static and moving dislocations in silicon
M. Heggie and R. JonesPhilosophical Magazine B 48 (4) 379 (1983)
https://doi.org/10.1080/13642818308246489
Solitons and the electrical and mobility properties of dislocations in silicon
M. Heggie and R. JonesPhilosophical Magazine B 48 (4) 365 (1983)
https://doi.org/10.1080/13642818308246488
Atomistics of Fracture
Peter HaasenAtomistics of Fracture 707 (1983)
https://doi.org/10.1007/978-1-4613-3500-9_24
Observation of a Novel Electron Paramagnetic Resonance in Germanium Containing Dislocations
E. J. Pakulis and C. D. JeffriesPhysical Review Letters 47 (25) 1859 (1981)
https://doi.org/10.1103/PhysRevLett.47.1859
Nonradiative Recombination at Dislocations in III-V Compound Semiconductors
P. M. Petroff, R. A. Logan and A. SavagePhysical Review Letters 44 (4) 287 (1980)
https://doi.org/10.1103/PhysRevLett.44.287