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Article cité :

Thermally activated plastic deformation of Si single crystals at temperatures above 1173 K

Tubasa Suzuki, Masaki Tanaka, Tatsuya Morikawa, Jun Fujise and Toshiaki Ono
Japanese Journal of Applied Physics 62 (2) 021001 (2023)
https://doi.org/10.35848/1347-4065/acb2b9

Polymerization of defect states at dislocation cores in InAs

Ji-Sang Park, Joongoo Kang, Ji-Hui Yang, W. E. McMahon and Su-Huai Wei
Journal of Applied Physics 119 (4) (2016)
https://doi.org/10.1063/1.4940743

Kinetic Monte Carlo and density functional study of hydrogen enhanced dislocation glide in silicon

S. Scarle and C. P. Ewels
The European Physical Journal B 51 (2) 195 (2006)
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Effects of Dislocation Interactions: Application to the Period-Doubled Core of the 90° Partial in Silicon

Niklas Lehto and Sven Öberg
Physical Review Letters 80 (25) 5568 (1998)
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Molecular-cluster studies of defects in silicon lattices. III. Dangling-bond reconstruction at the core of a 90° partial dislocation in silicon

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John Northrup, Marvin Cohen, James Chelikowsky, J. Spence and A. Olsen
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The structure of kinks on the 90° partial in silicon and a ‘strained-bond model’ for dislocation motion

R. Jones
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