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Article cité :
D.J.H. Cockayne , A. Hons
J. Phys. Colloques, 40 C6 (1979) C6-11-C6-18
Citations de cet article :
10 articles
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Strain relaxation in heteroepitaxial films by misfit twinning. I. Critical thickness
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Calculation of displacement fields and simulation of HRTEM images of dislocations in sphalerite type A(III)B(V) compound semiconductors
M. Lazar and G. Wagner Crystal Research and Technology 32 (1) 111 (1997) https://doi.org/10.1002/crat.2170320111
Dislocations and their dissociation in SixGe1 - xalloys
D. Stenkamp and W. Jäger Philosophical Magazine A 65 (6) 1369 (1992) https://doi.org/10.1080/01418619208205610
Dislocation dissociation widths in silicon at low temperature under controlled high-stress orientations
J. L. Demenet, P. Grosbras, H. Garem and J. C. Desoyer Philosophical Magazine A 59 (3) 501 (1989) https://doi.org/10.1080/01418618908229781
Dislocations and plasticity in semiconductors. I — Dislocation structures and dynamics
A. George and J. Rabier Revue de Physique Appliquée 22 (9) 941 (1987) https://doi.org/10.1051/rphysap:01987002209094100
Fine structure of (010)[001] dislocations in K-feldspars
Y. Zheng and M. Gandais Philosophical Magazine A 55 (3) 329 (1987) https://doi.org/10.1080/01418618708209871
Solitons and the electrical and mobility properties of dislocations in silicon
M. Heggie and R. Jones Philosophical Magazine B 48 (4) 365 (1983) https://doi.org/10.1080/13642818308246488
Distinguishing dissociated glide and shuffle set dislocations by high resolution electron microscopy
A. Olsen and J. C. H. Spence Philosophical Magazine A 43 (4) 945 (1981) https://doi.org/10.1080/01418618108239504