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Article cité :
C.J. ADKINS , S. POLLITT , M. PEPPER
J. Phys. Colloques, 37 C4 (1976) C4-343-C4-347
Citations de cet article :
10 articles
Description of low temperature bandtail states in two-dimensional semiconductors using path integral approach
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Analysis of Carrier Transport in Trigate Si Nanowire MOSFETs
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Metal insulator transitions and the effects of electron electron interactions in two-dimensional electron systems
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Variable range hopping via a small number of localized states in nanometer scale MOSFETs
C. de Graaf, J.W.G. Wildöer, J. Caro, S. Radelaar and K. Heyers Surface Science 263 (1-3) 409 (1992) https://doi.org/10.1016/0039-6028(92)90378-J
Resonant tunneling and hopping through a series of localized states in a two-dimensional electron gas
Dragana Popović, A. Fowler and S. Washburn Physical Review Letters 67 (20) 2870 (1991) https://doi.org/10.1103/PhysRevLett.67.2870
Conductance fluctuations in large metal-oxide-semiconductor structures in the variable-range hopping regime
Dragana Popović, A. B. Fowler, S. Washburn and P. J. Stiles Physical Review B 42 (3) 1759 (1990) https://doi.org/10.1103/PhysRevB.42.1759
Effect of inhomogeneities on the two-dimensional conductivity of silicon inversion layers in the activated regime
Mike Dotson Physical Review B 28 (8) 4685 (1983) https://doi.org/10.1103/PhysRevB.28.4685
Conductance in Restricted-Dimensionality Accumulation Layers
A. B. Fowler, A. Hartstein and R. A. Webb Physical Review Letters 48 (3) 196 (1982) https://doi.org/10.1103/PhysRevLett.48.196
VII. The Hall effect in inversion layers
C. J. Adkins Philosophical Magazine B 38 (5) 535 (1978) https://doi.org/10.1080/13642817808246402
The two-dimensional white noise problem and localisation in an inversion layer
D J Thouless and M E Elzain Journal of Physics C: Solid State Physics 11 (16) 3425 (1978) https://doi.org/10.1088/0022-3719/11/16/012