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Article cité :
D. B. McWHAN , A. MENTH , J. P. REMEIKA
J. Phys. Colloques, 32 C1 (1971) C1-1079-C1-1085
Citations de cet article :
26 articles
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Thermoresistive transitions in V2O3+x thin films
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Crystal chemistry of V3O5 and related structures
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Hyperfine spectroscopic study of the metal-insulator transition in V2O3
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High temperature resistivity characteristics of nonstoichiometric V2O3
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Impurity doping effects in V2O3
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Electrical properties of the(V1−xCrx)2O3system
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Correlation between the high temperature anomalies in V2O3 and the lattice parameters
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Small angle diffuse neutron scattering: Measurements on V2O3 in the temperature range 400–600 K
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Thermal studies on Cr-doped V2O3 crystals
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Low temperature specific heat of(V1−xCrx)2O3and(V1−xAlx)2O3
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Metal-Insulator Transition in(V1−xCrx)2O3
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Metal-Insulator Transitions in Pure and DopedV2O3
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Heat Capacity of MetallicV2O3at High Pressure
D. B. McWhan, J. P. Remeika, S. D. Bader, B. B. Triplett and N. E. Phillips Physical Review B 7 (7) 3079 (1973) https://doi.org/10.1103/PhysRevB.7.3079
Metal-insulator transition in VnO2n−1
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Heat Capacity of Vanadium Oxides at Low Temperature
D. B. McWhan, J. P. Remeika, J. P. Maita, et al. Physical Review B 7 (1) 326 (1973) https://doi.org/10.1103/PhysRevB.7.326
Electronic Specific Heat of Metallic Ti-DopedV2O3
D. B. McWhan, J. P. Remeika, T. M. Rice, et al. Physical Review Letters 27 (14) 941 (1971) https://doi.org/10.1103/PhysRevLett.27.941