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Articles citing this article

The Citing articles tool gives a list of articles citing the current article.
The citing articles come from EDP Sciences database, as well as other publishers participating in CrossRef Cited-by Linking Program. You can set up your personal account to receive an email alert each time this article is cited by a new article (see the menu on the right-hand side of the abstract page).

Cited article:

Silicon T -center hyperfine structure and memory protection schemes

Nicholas Brunelle, Joshua Kanaganayagam, Mehdi Keshavarz, Chloe Clear, Oney Soykal, Myles Ruether, Adam DeAbreu, Amirhossein AlizadehKhaledi, Yihuang Xiong, Nikolay V. Abrosimov, Geoffroy Hautier, Michael Thewalt, Stephanie Simmons and Daniel Higginbottom
Physical Review B 113 (3) (2026)
https://doi.org/10.1103/m23d-b4vg

Spectral tuning and nanoscale localization of single color centers in silicon via controllable strain

Alessandro Buzzi, Camille Papon, Matteo Pirro, Odiel Hooybergs, Hamza Raniwala, Valeria Saggio, Carlos Errando-Herranz and Dirk Englund
Nature Communications 16 (1) (2025)
https://doi.org/10.1038/s41467-025-63871-8

Optical-transition parameters of the silicon T center

Chloe Clear, Sara Hosseini, Amirhossein AlizadehKhaledi, Nicholas Brunelle, Austin Woolverton, Joshua Kanaganayagam, Moein Kazemi, Camille Chartrand, Mehdi Keshavarz, Yihuang Xiong, Louis Alaerts, Öney O. Soykal, Geoffroy Hautier, Valentin Karassiouk, Mike Thewalt, Daniel Higginbottom and Stephanie Simmons
Physical Review Applied 22 (6) (2024)
https://doi.org/10.1103/PhysRevApplied.22.064014

Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

Andrea Ristori, Mario Khoury, Marco Salvalaglio, Angelos Filippatos, Michele Amato, Tobias Herzig, Jan Meijer, Sebastien Pezzagna, Drisse Hannani, Monica Bollani, Chiara Barri, Carmen M. Ruiz, Nicoletta Granchi, Francesca Intonti, Marco Abbarchi and Francesco Biccari
Advanced Optical Materials 12 (4) (2024)
https://doi.org/10.1002/adom.202301608

Gallium Vacancy—Shallows Donor Complexes in n-GaAs Doped with Elements of Group VI Te or S (Review)

A. A. Gutkin and N. S. Averkiev
Semiconductors 57 (6) 275 (2023)
https://doi.org/10.1134/S1063782623080055

Optical Absorption of Impurities and Defects in Semiconducting Crystals

Bernard Pajot and Bernard Clerjaud
Springer Series in Solid-State Sciences, Optical Absorption of Impurities and Defects in Semiconducting Crystals 169 113 (2013)
https://doi.org/10.1007/978-3-642-18018-7_4

Piezospectroscopic evidence for tetrahedral symmetry of theEL2 defect in GaAs

P. Trautman, J. P. Walczak and J. M. Baranowski
Physical Review B 41 (5) 3074 (1990)
https://doi.org/10.1103/PhysRevB.41.3074

Progress in Electron Properties of Solids

A. K. Ramdas and S. Rodriguez
Physics and Chemistry of Materials with Low-Dimensional Structures, Progress in Electron Properties of Solids 10 65 (1989)
https://doi.org/10.1007/978-94-009-2419-2_6

New model of the irradiation-induced 0.97-eV (G) line in silicon: ACS−Si*complex

K. Thonke, H. Klemisch, J. Weber and R. Sauer
Physical Review B 24 (10) 5874 (1981)
https://doi.org/10.1103/PhysRevB.24.5874