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Optical-transition parameters of the silicon T center

Chloe Clear, Sara Hosseini, Amirhossein AlizadehKhaledi, Nicholas Brunelle, Austin Woolverton, Joshua Kanaganayagam, Moein Kazemi, Camille Chartrand, Mehdi Keshavarz, Yihuang Xiong, Louis Alaerts, Öney O. Soykal, Geoffroy Hautier, Valentin Karassiouk, Mike Thewalt, Daniel Higginbottom and Stephanie Simmons
Physical Review Applied 22 (6) (2024)
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Strain Engineering of the Electronic States of Silicon‐Based Quantum Emitters

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Advanced Optical Materials 12 (4) (2024)
https://doi.org/10.1002/adom.202301608

Gallium Vacancy—Shallows Donor Complexes in n-GaAs Doped with Elements of Group VI Te or S (Review)

A. A. Gutkin and N. S. Averkiev
Semiconductors 57 (6) 275 (2023)
https://doi.org/10.1134/S1063782623080055

Optical Absorption of Impurities and Defects in Semiconducting Crystals

Bernard Pajot and Bernard Clerjaud
Springer Series in Solid-State Sciences, Optical Absorption of Impurities and Defects in Semiconducting Crystals 169 113 (2013)
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New model of the irradiation-induced 0.97-eV (G) line in silicon: ACS−Si*complex

K. Thonke, H. Klemisch, J. Weber and R. Sauer
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