| Numéro |
J. Phys. Colloques
Volume 51, Numéro C1, Janvier 1990
Proceeding of the International CongressIntergranular and Interphase Boundaries in materials |
|
|---|---|---|
| Page(s) | C1-915 - C1-920 | |
| DOI | https://doi.org/10.1051/jphyscol:19901144 | |
J. Phys. Colloques 51, C1-915-C1-920 (1990)
DOI: 10.1051/jphyscol:19901144
1 Centre d'Elaboration des Matériaux et d'Etudes Structurales. Laboratoire d'optique Electronique (CEMES-LOE) du CNRS, 29 Rue Jeanne Marvig, F-31400 Toulouse, France
2 THOMSON-CSF/LCR, Domaine de Corbeville, F-91404 Orsay, France
DOI: 10.1051/jphyscol:19901144
INTERFACIAL DEFECTS IN GaAs/Si AFTER ANNEALING
A. ROCHER1, M.-N. CHARASSE2, B. BARTENLIAN2 et J. CHAZELAS21 Centre d'Elaboration des Matériaux et d'Etudes Structurales. Laboratoire d'optique Electronique (CEMES-LOE) du CNRS, 29 Rue Jeanne Marvig, F-31400 Toulouse, France
2 THOMSON-CSF/LCR, Domaine de Corbeville, F-91404 Orsay, France
Abstract
The threading defects involved in the GaAs/Si heterostructure have been studied in as-grown and annealed specimens. Their origin is related to the imperfections of the interface : impurities, roughness and discontinuities of misfit dislocation network. Large parts of the GaAs layer are almost free of stress in the annealed specimen. Residual stresses and defects are located at the boundaries between the Lomer dislocation arrays. Small antiphase domains are also observed.