| Numéro |
J. Phys. Colloques
Volume 50, Numéro C8, Novembre 1989
36th International Field Emission Symposium
|
|
|---|---|---|
| Page(s) | C8-59 - C8-63 | |
| DOI | https://doi.org/10.1051/jphyscol:1989811 | |
J. Phys. Colloques 50 (1989) C8-59-C8-63
DOI: 10.1051/jphyscol:1989811
NUMERICAL CALCULATION OF THE SURFACE TEMPERATURE OF SEMICONDUCTOR TIPS IN PULSED-LASER AP-FIM
M. TOMITA1 et T. KURODA21 Shindengen Electric Mfg. Co., Ltd, 10-13 Minami, Hannno, Saitama 357, Japan.
2 The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567, Japan
Abstract
The surface temperature of semiconductor tips irradiated by pulsed-laser is calculated. This calculation is based on new idea because the idea used in calculation of temperature of metal tips cannot be applied to that of semiconductor tips. The radius of the tip apex is not an important factor in estimating the temperature of semiconductor tips irradiated by the pulsed-laser. The maximum surface temperature of the semiconductor tips apex reached depends almost linearly on the incident energy density of the pulsed-laser beams. The apparent optical absorption coefficient closely related to the angle of cone of tip also plays an important role in the temperature rise of the semiconductor tip. Here is a complementation of the previous paper, Surface Science 203 (1989) 295. From the numerical result the simplified equation is proposed and a example using modified Einstein's specific formula for specific heat is used.