| Numéro |
J. Phys. Colloques
Volume 50, Numéro C6, Juin 1989
Beam Injection Assessment of Defects in SemiconductorsInternational Workshop |
|
|---|---|---|
| Page(s) | C6-183 - C6-183 | |
| DOI | https://doi.org/10.1051/jphyscol:1989637 | |
Beam Injection Assessment of Defects in Semiconductors
International Workshop
J. Phys. Colloques 50 (1989) C6-183-C6-183
DOI: 10.1051/jphyscol:1989637
1 Academy of Sciences of the D.R.G., Institute of Solid State Physics and Electron Microscopy, DDR-4020 Halle, D.R.G.
2 Academy of Sciences of the D.R.G., Institute of Semiconductor Physics, DDR-1200 Frankfurt, D.R.G.
International Workshop
J. Phys. Colloques 50 (1989) C6-183-C6-183
DOI: 10.1051/jphyscol:1989637
POSSIBILITIES OF FORMATION OF BRIGHT EBIC CONTRASTS DUE TO CRYSTAL DEFECTS IN SILICON
H. BLUMTRITT1, M. KITTLER2 et W. SEIFERT21 Academy of Sciences of the D.R.G., Institute of Solid State Physics and Electron Microscopy, DDR-4020 Halle, D.R.G.
2 Academy of Sciences of the D.R.G., Institute of Semiconductor Physics, DDR-1200 Frankfurt, D.R.G.
Abstract
Besides the usual, well understood dark recombination contrasts, also bright EBIC contrasts can be found at extended crystal defects in silicon. Often they appear as bright haloes around dark contrasts, but sole bright contrats are observed, too.