| Numéro |
J. Phys. Colloques
Volume 49, Numéro C5, Octobre 1988
Interface Science and Engineering '87An International Conference on the Structure and Properties of Internal Interfaces |
|
|---|---|---|
| Page(s) | C5-635 - C5-640 | |
| DOI | https://doi.org/10.1051/jphyscol:1988581 | |
Interface Science and Engineering '87
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-635-C5-640
DOI: 10.1051/jphyscol:1988581
Department of Metallurgy and Materials Science, University of Toronto, Toronto M5S 1A4, Canada
An International Conference on the Structure and Properties of Internal Interfaces
J. Phys. Colloques 49 (1988) C5-635-C5-640
DOI: 10.1051/jphyscol:1988581
A TEM STUDY OF DIFFUSION-INDUCED GRAIN BOUNDARY MIGRATION IN Ni-Cu DIFFUSION COUPLES
D. LIU, W.A. MILLER et K.T. AUSTDepartment of Metallurgy and Materials Science, University of Toronto, Toronto M5S 1A4, Canada
Abstract
A study was conducted on defect structures, orientation relationships, and compositional profiles at DIGM boundaries in Ni-Cu diffusion couples. TEM revealed dislocations at the initial grain boundary positions of the DIGM zones in the Ni substrate. The misorientation between the DIGM zones and the matrix (across the dislocation wall) was determined by electron diffraction and found to be less than 0.5°. Cu profiles across the DIGM zones were obtained by TEM/EDS analysis. The formation of the dislocation wall is discussed in terms of the misorientation and lattice misfit between the DIGM zones end the matrix.