| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-147 - C5-150 | |
| DOI | https://doi.org/10.1051/jphyscol:1987528 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-147-C5-150
DOI: 10.1051/jphyscol:1987528
1 The Clarendon Laboratory, Parks Road, GB-Oxford OX1 3PU, Great-Britain
2 Royal Signals and Radar Establishment, St. Andrews Road, GB-Malvern WR14 3PS, Worcs, Great-Britain
J. Phys. Colloques 48 (1987) C5-147-C5-150
DOI: 10.1051/jphyscol:1987528
MAGNETOOPTICS OF (Ga, In) As QUANTUM WELLS : EXCITON BINDING ENERGIES AND CARRIER EFFECTIVE MASSES
J. SINGLETON1, N.J. PULSFORD1, D.J. MOWBRAY1, M.S. SKOLNICK2, L.L. TAYLOR2, S.J. BASS2, R.J. NICHOLAS1 et W. HAYES11 The Clarendon Laboratory, Parks Road, GB-Oxford OX1 3PU, Great-Britain
2 Royal Signals and Radar Establishment, St. Andrews Road, GB-Malvern WR14 3PS, Worcs, Great-Britain
Abstract
Transmission measurements, in magnetic fields of up to 16T, have been performed on a series of undoped (Ga,In)As-InP quantum wells. Transitions with Landau indices up to l=15 and energies up to 400meV above Eg are seen. A fit of the experimental data to a theoretical model for excitons at high magnetic fields in very anisotropic systems allows us to deduce values for the carrier effective masses, the electron non-parabolicity and the exciton binding energy.