| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-611 - C5-614 | |
| DOI | https://doi.org/10.1051/jphyscol:19875131 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-611-C5-614
DOI: 10.1051/jphyscol:19875131
AT and T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
J. Phys. Colloques 48 (1987) C5-611-C5-614
DOI: 10.1051/jphyscol:19875131
SUPERLATTICE TUNNELING DETECTORS OPERATING AT λ = 10 µm, BASED ON QUANTUM WELL INTERSUBBAND ABSORPTION
B.F. LEVINE, K.K. CHOI, C.G. BETHEA, J. WALKER et R.J. MALIKAT and T Bell Laboratories, Murray Hill, NJ 07974, U.S.A.
Abstract
We demonstrate a novel 10.3 µm superlattice infrared detector based on doped quantum wells of GaAs/AlGaAs. Intersubband resonance radiation excites an electron from the ground state into the first excited state, where it rapidly tunnels out producing a photocurrent. We achieve a narrow bandwidth (10%) photosensitivity with a responsivity as large as 1.9 A/W and an estimated speed of 30 ps.