CALCULATION OF BOUND STATES IN A STRAINED Ge0.25Si0.75/Si/Ge0.25Si0.75 QUANTUM WELL

D.T. HUGHES; S. BRAND

doi:doi:10.1051/jphyscol:19875122

Numéro		J. Phys. Colloques Volume 48, Numéro C5, Novembre 1987 3rd International Conference on Modulated Semiconductor Structures


Page(s)		C5-565 - C5-568
DOI		https://doi.org/10.1051/jphyscol:19875122

3rd International Conference on Modulated Semiconductor Structures

J. Phys. Colloques 48 (1987) C5-565-C5-568
DOI: 10.1051/jphyscol:19875122

CALCULATION OF BOUND STATES IN A STRAINED Ge_0.25Si_0.75/Si/Ge_0.25Si_0.75 QUANTUM WELL

D.T. HUGHES et S. BRAND

Applied Physics Group, School of Engineering and Applied Science, South Road, GB-Durham, DH1 3LE, Great-Britain

Abstract
We present results of a complex bandstructure matching technique applied to a calculation of the bound states of a Ge_0.25Si_0.75/Si/Ge_0.25Si_0.75 strained quantum well. The effects of alloying and strain in the barrier and well regions are introduced into the bulk bandstructure by appropriate adjustment of the pseudopotential form factors. The form of the conduction band bound-state energy levels as a function of well width is shown to agree with the periodic small-energy splittings predicted by the envelope function approximation. Finally some averaged charge densities are plotted along the (100) direction.