| Numéro |
J. Phys. Colloques
Volume 48, Numéro C5, Novembre 1987
3rd International Conference on Modulated Semiconductor Structures
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|---|---|---|
| Page(s) | C5-29 - C5-32 | |
| DOI | https://doi.org/10.1051/jphyscol:1987504 | |
3rd International Conference on Modulated Semiconductor Structures
J. Phys. Colloques 48 (1987) C5-29-C5-32
DOI: 10.1051/jphyscol:1987504
Department of Physics and Astronomy, University of Maryland, College Park, MD 20742, U.S.A.
J. Phys. Colloques 48 (1987) C5-29-C5-32
DOI: 10.1051/jphyscol:1987504
MONTE-CARLO SIMULATION OF EPITAXIAL GROWTH : GexSi(1-x)/Si INTERFACES
A. KOBAYASHI et S. DAS SARMADepartment of Physics and Astronomy, University of Maryland, College Park, MD 20742, U.S.A.
Abstract
Epitaxial growth of GexSi(1-x)/Si interfaces is simulated employing a direct Monté-Carlo technique. In addition to various inter- and intra-layer diffusion processes of Si and Ge adatoms, we include a model strain-driven mechanism that gives rise to defects (local out-of-registry regions) in the overgrowth. Our simulation indicates that : (i) the overgrowth is defect-free for x≤0.2 ; (ii) defect-formation is inevitable for x≥0.5 ; and (iii) the transition between the two cases occurs smoothly within 0.2<x<0.5.