| Numéro |
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
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|---|---|---|
| Page(s) | C8-521 - C8-524 | |
| DOI | https://doi.org/10.1051/jphyscol:1986897 | |
EXAFS and Near Edge Structure IV
J. Phys. Colloques 47 (1986) C8-521-C8-524
DOI: 10.1051/jphyscol:1986897
LURE, (Lab. CNRS, CEA, MEN), Université Paris-Sud, F-91405 Orsay Cedex, France
J. Phys. Colloques 47 (1986) C8-521-C8-524
DOI: 10.1051/jphyscol:1986897
THE GROWTH OF THE Pt/Si (111) 7 x 7 INTERFACES AS PROBED BY Pt L3 SEXAFS
G. ROSSI, D. CHANDESRIS, P. ROUBIN et J. LECANTELURE, (Lab. CNRS, CEA, MEN), Université Paris-Sud, F-91405 Orsay Cedex, France
Abstract
SEXAFS and XARS on the Pt, L2, 3 edges for submonolayer and monolayer coverages on Si (111) 7 x 7 allow to recognize the growth mode of the Pt/Si silicide like interface, at room temperature. Chemisorption into sixfold interstitial sites in the top Si (111) double layer is followed by intermixing, and likely nucleation of Pt2Si coordinated clusters.