Numéro
J. Phys. Colloques
Volume 47, Numéro C8, Décembre 1986
EXAFS and Near Edge Structure IV
Page(s) C8-997 - C8-1000
DOI https://doi.org/10.1051/jphyscol:19868192
EXAFS and Near Edge Structure IV

J. Phys. Colloques 47 (1986) C8-997-C8-1000

DOI: 10.1051/jphyscol:19868192

MULTIPLET EFFECTS IN NEAR EDGE XAS FOR GROUND STATE STUDIES

G. VAN DER LAAN1, B.T. THOLE1, J. ZAANEN1, G.A. SAWATZKY1, J.C. FUGGLE2, R.C. KARNATAK3 et J.M. ESTEVA3

1  Physical Chemistry Department of the Materials Science Center, Nijenborgh 16, NL-9747 AG Groningen, The Netherlands
2  Research Institute for Materials, University of Nijmegen, Toernooiveld 10, NL-6525 ED Nijmegen, The Netherlands
3  Laboratoire pour l'Utilisation du Rayonnement Electromagnétique, Bâtiment 209 D, Université Paris-Sud, F-91405 Orsay Cedex, France


Abstract
Manifold aspects of high resolution near edge absorption spectroscopy in the soft X-ray range can reveal interesting information on the nature of the ground state in various materials. One method uses the near edge multiplet structure of the final states, in which the optical selection rules limit the terms that can be reached from a given ground state. Thus the observed multiplet can be used to diagnose the ground state. This will be illustrated for Ce impurities and for Ni compounds