| Numéro |
J. Phys. Colloques
Volume 47, Numéro C2, Mars 1986
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
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| Page(s) | C2-321 - C2-327 | |
| DOI | https://doi.org/10.1051/jphyscol:1986249 | |
32 nd International Field Emission Symposium / 32ème Symposium International d'Emission de Champ
J. Phys. Colloques 47 (1986) C2-321-C2-327
DOI: 10.1051/jphyscol:1986249
1 The Institute for Solid State Physics, The University of Tokyo, Minato-ku, Tokyo, Japan
2 College of Art and Science, Osaka Prefecture University, Osaka, Japan
J. Phys. Colloques 47 (1986) C2-321-C2-327
DOI: 10.1051/jphyscol:1986249
AN ATOM-PROBE STUDY OF SEMICONDUCTOR-METAL INTERFACES
A. JIMBO1, T. HASHIZUME1, T. SAKATA2 et T. SAKURAI11 The Institute for Solid State Physics, The University of Tokyo, Minato-ku, Tokyo, Japan
2 College of Art and Science, Osaka Prefecture University, Osaka, Japan
Abstract
A ToF atom-probe study of GaAs-metal (Ti, Pd, Ni etc.) interfaces were carried out using both high-voltage and laser pulses.