| Numéro |
J. Phys. Colloques
Volume 42, Numéro C7, Octobre 1981
Third International Conference on Hot Carriers in Semiconductors
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|---|---|---|
| Page(s) | C7-477 - C7-482 | |
| DOI | https://doi.org/10.1051/jphyscol:1981758 | |
Third International Conference on Hot Carriers in Semiconductors
J. Phys. Colloques 42 (1981) C7-477-C7-482
DOI: 10.1051/jphyscol:1981758
Division of Engineering and Department of Physics, Brown University, Providence, Rhode Island, 02912, U.S.A.
J. Phys. Colloques 42 (1981) C7-477-C7-482
DOI: 10.1051/jphyscol:1981758
OPTICAL PICOSECOND STUDIES OF HOT CARRIERS IN AMORPHOUS SEMICONDUCTORS
Z. Vardeny et J. TaucDivision of Engineering and Department of Physics, Brown University, Providence, Rhode Island, 02912, U.S.A.
Abstract
Thermalization of photogenerated carriers in a-Si, a-Si:H, a-As2Se3 and a-Se was studied by measuring the photoinduced absorption with subpicosecond resolution. The thermalization process can be described by Fröhlich interaction with polar phonons in a-Si:H and a-As2Se3 but not in a-Si. Using photon energy of 2eV, the excess energy dissipation rates were determined to be 0.5 eV/ps in a-Si, 0.1 eV/ps in a-Si:H, 0.2 eV/ps in a-As2Se3 and less than 0.05 eV/ps in a-Se.