| Numéro |
J. Phys. Colloques
Volume 42, Numéro C5, Octobre 1981
ICIFUAS-7Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids |
|
|---|---|---|
| Page(s) | C5-253 - C5-257 | |
| DOI | https://doi.org/10.1051/jphyscol:1981536 | |
Seventh International Conference on Internal Friction and Ultrasonic Attenuation in Solids
J. Phys. Colloques 42 (1981) C5-253-C5-257
DOI: 10.1051/jphyscol:1981536
DISLOCATION AMPLITUDE DEPENDENT ULTRASOUND ABSORPTION IN NORMAL AND SUPERCONDUCTING LEAD CONTAINING DIVERSE VALENCY IMPURITIES
L.N. Pal-Val1, V.Ya. Platkov1 et A.M. Roshchupkin21 Physico-Technical Institute of Low Temperatures, Kharkov, U.S.S.R.
2 Voronezh Polytechnical Institute, Voronezh, U.S.S.R.
Abstract
Amplitude degendence of ultrasonic absorption α (ε0) has been studied in lead single crystals containing one of the following impurities : Tl, Sn, Bi, Cd, Sb. Critical amplitude of the beginning of (α dependence on α increased in the going from T1 to Sb in the above impurity series. At s-n transition ε0 increased by 25 to 35%. The characteristic stress level values of dislocation unpinning from impurities were obtained and their change at the superconducting transition was identified. With the aim to define contributions of different physical nature to the total value of interaction between dislocations and impurity atoms an approach for experimental data treatment is offered and the quantitative information of these contributions is obtained. The change of α at n-s transition is explained by the variation of dislocation loops, LN, overdamping degree leading to the increase in internal friction.