| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-463 - C4-466 | |
| DOI | https://doi.org/10.1051/jphyscol:1981497 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-463-C4-466
DOI: 10.1051/jphyscol:1981497
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084, U.S.A.
J. Phys. Colloques 42 (1981) C4-463-C4-466
DOI: 10.1051/jphyscol:1981497
HIGH EFFICIENCY, LARGE-AREA PHOTOVOLTAIC DEVICES USING AMORPHOUS Si : F : H ALLOY
A. Madan, W. Czubatyj, J. Yang, J. McGill and S.R. OvshinskyEnergy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084, U.S.A.
Abstract
Overall conversion efficiency of 6.6% has been obtained for a photovoltaic device over an active area 0.73 cm2 using amorphous Si : F : H alloy in a MIS configuration.