| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-395 - C4-398 | |
| DOI | https://doi.org/10.1051/jphyscol:1981485 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-395-C4-398
DOI: 10.1051/jphyscol:1981485
Faculté des Sciences, Université de l'Etat, B-7000 Mons, Belgium
J. Phys. Colloques 42 (1981) C4-395-C4-398
DOI: 10.1051/jphyscol:1981485
LASER-INDUCED METASTABLE STATES IN AMORPHOUS SEMICONDUCTORS
M. Wautelet, R. Andrew, M. Failly-Lovato and L.D. LaudeFaculté des Sciences, Université de l'Etat, B-7000 Mons, Belgium
Abstract
A model is presented in which dehybridisation of dangling bond sites is responsible for the creation , under laser irradiation , of metastable states in GD a-Si and in a-Ge. Due to strong electron-phonon coup1ing, the activation energy necessary to recover the initial state is as large as 1.5 eV in GD a-Si and points at extremely long lifetimes for such states . This model describes very well the fatigue of luminescence and metastable changes in dc conductivity which have been observed in amorphous semiconductors . It predicts a shift of the Fermi level of undoped materials after laser irradiation.