| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-1001 - C4-1004 | |
| DOI | https://doi.org/10.1051/jphyscol:19814218 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-1001-C4-1004
DOI: 10.1051/jphyscol:19814218
1 Département d'Electronique, E.R.A. 375, Université de Provence, Centre Saint-Jérôme, 13397 Marseille Cedex 13, France
2 Spectrochimie du Solide, L.A. 302, Université Pierre et Marie Curie, 75000 Paris, France
J. Phys. Colloques 42 (1981) C4-1001-C4-1004
DOI: 10.1051/jphyscol:19814218
ELECTRON SPIN-LATTICE RELAXATION : A TOOL FOR THE INVESTIGATION OF PARAMAGNETIC CENTERS IN AMORPHOUS SEMI-CONDUCTORS
A. Deville1, B. Gaillard1, C. Blanchard1 and J. Livage21 Département d'Electronique, E.R.A. 375, Université de Provence, Centre Saint-Jérôme, 13397 Marseille Cedex 13, France
2 Spectrochimie du Solide, L.A. 302, Université Pierre et Marie Curie, 75000 Paris, France
Abstract
The spin-lattice (S.L.) relaxation properties of pure and W-doped V2O5 are examined. The S.L. rates for pure crystalline and amorphous oxide have been measured from 1.5 to 50 and 100 K respectively. The knowledge of the S.L. rates is used to clarify the spectrum of W-doped V2O5.