| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-115 - C4-118 | |
| DOI | https://doi.org/10.1051/jphyscol:1981421 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-115-C4-118
DOI: 10.1051/jphyscol:1981421
Max-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7 Stuttgart-80, F.R.G.
J. Phys. Colloques 42 (1981) C4-115-C4-118
DOI: 10.1051/jphyscol:1981421
THEORY OF TEMPERATURE AND INTENSITY DEPENDENCE OF PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS
G.H. DöhlerMax-Planck-Institut für Festkörperforschung, Heisenbergstr. 1, 7 Stuttgart-80, F.R.G.
Abstract
The generation and recombination kinetics of non-equilibrium charge carriers under illumination is studied in order to obtain the temperature and intensity dependence of the steady state energy distribution of photo-induced carriers in the range of energies contributing to the electrical transport. The results are applied to a model of transport in amorphous solids developed previously. Comparison with experimental data on photo-conductivity of glow-discharge silicon provides further support for this model.