| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-935 - C4-938 | |
| DOI | https://doi.org/10.1051/jphyscol:19814204 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-935-C4-938
DOI: 10.1051/jphyscol:19814204
Department of Chemistry, Friedrich-Schiller-University, Jena, G.D.R.
J. Phys. Colloques 42 (1981) C4-935-C4-938
DOI: 10.1051/jphyscol:19814204
EVIDENCE FOR CHARGED DEFECTS IN CHALCOGENIDES FROM HIGH FIELD CONDUCTIVITY
A. Feltz, H. Kahnt and F. SchirrmeisterDepartment of Chemistry, Friedrich-Schiller-University, Jena, G.D.R.
Abstract
The non-linear current voltage behaviour of amorphous Ge4Se5Te thin film layers prepared by cooling from the melt, by thermal low temperature evaporation of the bulk material and by application of a flash evaporation technique is investigated, in order to study the influence of the density of localized intrinsic defect states on the Poole Frenkel effect. The experimental results are discussed in terms of a model of screened centres in the case of the flashed layers.