Numéro
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
Page(s) C4-899 - C4-902
DOI https://doi.org/10.1051/jphyscol:19814195
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors

J. Phys. Colloques 42 (1981) C4-899-C4-902

DOI: 10.1051/jphyscol:19814195

SILVER-DOPED AMORPHOUS As2Se3 FILMS STUDIED BY XPS

T. Ueno and A. Odajima

Hokkaido University, Sapporo, Japan


Abstract
X-ray photoelectron spectra were measured to determine the binding energies of the core electrons in Ag films and amorphous films of As, Se As2Se3 and Ag-photo-doped-As2Se3. Auger spectra were measured to determine the kinetic energies of Ag and Ag-doped amorphous As2Se3 films. Chemical shifts by doping can be interpreted in terms of the electron transfer from Ag to As and Se ; charged defects are induced to As-Se bonds. The mechanism of the migration of Ag ions in amorphous As2Se3 is discussed.