Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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Page(s) | C4-899 - C4-902 | |
DOI | https://doi.org/10.1051/jphyscol:19814195 |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-899-C4-902
DOI: 10.1051/jphyscol:19814195
Hokkaido University, Sapporo, Japan
J. Phys. Colloques 42 (1981) C4-899-C4-902
DOI: 10.1051/jphyscol:19814195
SILVER-DOPED AMORPHOUS As2Se3 FILMS STUDIED BY XPS
T. Ueno and A. OdajimaHokkaido University, Sapporo, Japan
Abstract
X-ray photoelectron spectra were measured to determine the binding energies of the core electrons in Ag films and amorphous films of As, Se As2Se3 and Ag-photo-doped-As2Se3. Auger spectra were measured to determine the kinetic energies of Ag and Ag-doped amorphous As2Se3 films. Chemical shifts by doping can be interpreted in terms of the electron transfer from Ag to As and Se ; charged defects are induced to As-Se bonds. The mechanism of the migration of Ag ions in amorphous As2Se3 is discussed.