| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-745 - C4-748 | |
| DOI | https://doi.org/10.1051/jphyscol:19814163 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-745-C4-748
DOI: 10.1051/jphyscol:19814163
Central Electricity Research Laboratories, Leatherhead, Surrey KT22 7SE, U.K.
J. Phys. Colloques 42 (1981) C4-745-C4-748
DOI: 10.1051/jphyscol:19814163
THEORY OF DOPANT LEVEL DEPTHS IN a-Si
J. RobertsonCentral Electricity Research Laboratories, Leatherhead, Surrey KT22 7SE, U.K.
Abstract
The energies of dopant levels in a-Si and a-Si : H are predicted and related to the dopant's orbital energies and silicon dangling bond energies.