| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
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|---|---|---|
| Page(s) | C4-659 - C4-662 | |
| DOI | https://doi.org/10.1051/jphyscol:19814145 | |
J. Phys. Colloques 42 (1981) C4-659-C4-662
DOI: 10.1051/jphyscol:19814145
R.F. MAGNETRON SPUTTERING OF a-Si : H
A.R. Mirza1, A.J. Rhodes2, J. Allison1 and M.J. Thompson31 Department of Electronic Engineering, the University, Sheffield, U.K.
2 Department of Physics Engineering, the University, Sheffield, U.K.
3 Currently on leave at Xerox Corp., Palo Alto
Abstract
R.F. sputtering of films in a planar magnetron configuration, which is becoming a well-established technique for high-rate deposition, has the additional advantage when used for the deposition of a-Si-H that the presence of a magnetic field at the target effectively confines the energetic charged species emitted from the target, thus preventing their bombardment of the substrate on which the films are being deposited. Since bombardment by ions has been found to strongly influence the properties of a-Si-H [1], magnetron sputtering is of considerable interest, particularly for multijunction electronic devices, such as a-Si MOS transistors, since damage of a deposited layer by charged article bombardment during sputtering of subsequent layers is avoided. The optical and electrical properties of magnetron-sputtered a-Si-H films have been measured and are compared with those of more conventionally produced r.f. diode sputtered material. Magnetron films of a-Si-H prepared at PH = 6x10-4 torr possess good photoconductivity and Schottky diode performance. Hydrogen content and i.r. vibrational spectra measurements show distinct differences between the two processes. Optical absorption, luminescence, photovoltaic and other properties of magnetron-sputtered a-Si-H are also presented.