| Numéro |
J. Phys. Colloques
Volume 42, Numéro C4, Octobre 1981
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
|
|
|---|---|---|
| Page(s) | C4-87 - C4-90 | |
| DOI | https://doi.org/10.1051/jphyscol:1981414 | |
Proceedings of the Ninth International Conference on Amorphous and Liquid Semiconductors
J. Phys. Colloques 42 (1981) C4-87-C4-90
DOI: 10.1051/jphyscol:1981414
1 CTE Laboratoires, Waltham, MA 02254, U.S.A.
2 Parts of this work were done at University of St. Andrews, Scotland, University of California at Riverside, supported in part by NSF grant DMR78-21959-01, and Brown University, Providence, RI, USA, the latter supported by the Materials Research Laboratory, funded by the National Science Foundation.
3 University of California at Riverside, Riverside, CA 92502, U.S.A.
J. Phys. Colloques 42 (1981) C4-87-C4-90
DOI: 10.1051/jphyscol:1981414
THE HALL EFFECT DUE TO HOPPING CONDUCTION IN THE LOCALIZED STATES OF AMORPHOUS SEMICONDUCTORS
L. Friedman1, 2 and M. Pollak1, 31 CTE Laboratoires, Waltham, MA 02254, U.S.A.
2 Parts of this work were done at University of St. Andrews, Scotland, University of California at Riverside, supported in part by NSF grant DMR78-21959-01, and Brown University, Providence, RI, USA, the latter supported by the Materials Research Laboratory, funded by the National Science Foundation.
3 University of California at Riverside, Riverside, CA 92502, U.S.A.
Abstract
The Hall mobility μH due to hopping transport is calculated for systems with both positional and site-energy disorder. A percolation-theoretic approach is adopted and the Miller-Abrahams jump rates are used. In the low temperature, variable-range-hopping limit, an upper limit to μH is found (|μH|≤l0-4cm2V-1S-1 for a-Si at T=300K) and its temperature dependence is established.