| Numéro |
J. Phys. Colloques
Volume 40, Numéro C7, Juillet 1979
XIVe Conférence Internationale sur les Phénomènes d'Ionisation dans les Gaz / XIVth International Conference on Phenomena in Ionized Gases
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| Page(s) | C7-251 - C7-252 | |
| DOI | https://doi.org/10.1051/jphyscol:19797123 | |
XIVe Conférence Internationale sur les Phénomènes d'Ionisation dans les Gaz / XIVth International Conference on Phenomena in Ionized Gases
J. Phys. Colloques 40 (1979) C7-251-C7-252
DOI: 10.1051/jphyscol:19797123
Dresden Technical University, Department for Electrical Engineering Dresden, G.D.R.
J. Phys. Colloques 40 (1979) C7-251-C7-252
DOI: 10.1051/jphyscol:19797123
REASONS FOR THE DISPERSION OF BREAKDOWN VOLTAGES IN SF6
W. Hauschild et W. Mosch.Dresden Technical University, Department for Electrical Engineering Dresden, G.D.R.
Abstract
The breakdown in SF6 is a stochastic process, on the one hand because of the random development of electron avalanch [1] [2] [3], on the other hand because of random influences on the electrostatic field by micro-particles, micro-protrusions, or micro-discharges [1] [2] [3] [4] [5]. It is investigated which of the random influences causes the dispersion of the breakdown voltage at different kinds of the stressing voltage.