Table of contents
Le Journal de Physique Colloques
Vol. 50 No. C6 (Juin 1989)
Beam Injection Assessment of Defects in Semiconductors
International Workshop
- SEM MICROCHARACTERIZATION OF SEMICONDUCTORS BY EBIC AND CL
p. C6-3
D.B. HOLT
Abstract | PDF file (3.760 MB) - ELECTRON AND PHOTON - MATTER INTERACTION : ENERGY DISSIPATION AND INJECTION LEVEL
p. C6-15
E. NAPCHAN
Abstract | PDF file (830.3 KB) - MINORITY-CARRIER DIFFUSION LENGTH : MEASUREMENTS BY EBIC, CONNECTION TO MATERIALS MICROSTRUCTURE AND RELATION TO DEVICE PERFORMANCE
p. C6-31
M. KITTLER and W. SEIFERT
Abstract | PDF file (1.852 MB) - INTRINSIC OR EXTRINSIC ORIGIN OF THE RECOMBINATION AT EXTENDED DEFECTS
p. C6-47
B. SIEBER
Abstract | PDF file (626.6 KB) - MODELING THE EBIC MEASUREMENTS OF DIFFUSION LENGTHS AND THE RECOMBINATION CONTRAST AT EXTENDED DEFECTS
p. C6-57
C. DONOLATO
Abstract | PDF file (347.4 KB) - PERFORMANCE AND APPLICATIONS OF A STEM-CATHODOLUMINESCENCE SYSTEM
p. C6-65
J.W. STEEDS
Abstract | PDF file (1.375 MB) - CATHODOLUMINESCENCE IN DOUBLE HETEROJUNCTION LASERS
p. C6-73
P. HENOC, B. AKAMATSU and R.B. MARTINS
Abstract | PDF file (539.2 KB) - LATERAL MAPPING OF ATOMIC SCALE INTERFACE MORPHOLOGY AND DISLOCATIONS IN QUANTUM WELLS BY CATHODOLUMINESCENCE IMAGING
p. C6-85
J. CHRISTEN and D. BIMBERG
Abstract | PDF file (2.210 MB) - SCANNING-DLTS
p. C6-101
O. BREITENSTEIN
Abstract | PDF file (1.281 MB) - LBIC QUANTITATIVE MAPPING
p. C6-111
J.P. BOYEAUX and A. LAUGIER
Abstract | PDF file (1.699 MB) - ELECTRON AND OPTICAL BEAM TESTING OF INTEGRATED CIRCUITS
p. C6-129
J.-P. COLLIN
Abstract | PDF file (2.038 MB) - PROBLEMS ASSOCIATED WITH MODELLING OF RECOMBINATION AT DEFECTS, TEMPERATURE DEPENDENCE OF EBIC AND CL
p. C6-145
A. JAKUBOWICZ
Abstract | PDF file (3.205 MB) - HIGH SPATIAL RESOLUTION ELECTRON BEAM INDUCED CURRENT
p. C6-153
J.-L. MAURICE
Abstract | PDF file (53.50 KB) - ELECTRICAL ACTIVITY OF GRAIN BOUNDARIES IN SILICON BY THE S.T.E.B.I.C. METHOD
p. C6-154
C. CABANEL and J.-Y. LAVAL
Abstract | PDF file (516.9 KB) - PHOTOCAPACITY STUDY OF GRAIN BOUNDARY RECOMBINATION IN SILICON
p. C6-155
A. BRONIATOWSKI and D. BERNARD
Abstract | PDF file (62.66 KB) - SEM/EBIC STUDY OF ELECTRICAL PROPERTIES IN BULK AND AT GRAIN BOUNDARIES IN Sb-DOPED GERMANIUM
p. C6-156
N. TABET and C. MONTY
Abstract | PDF file (37.19 KB) - EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS
p. C6-157
A. IHLAL and G. NOUET
Abstract | PDF file (60.51 KB) - EBIC MEASUREMENTS ON LOW ANGLE GRAIN BOUNDARIES
p. C6-158
A. BARY and G. NOUET
Abstract | PDF file (57 KB) - EXTRINSIC ORIGINE OF RECOMBINATION CENTRES AT GRAIN BOUNDARIES IN P TYPE SILICON BICRYSTALS
p. C6-159
M. PASQUINELLI, N. M'GAFFAD, H. AMANRICH, L. AMMOR and S. MARTINUZZI
Abstract | PDF file (42.31 KB) - EVOLUTIONS OF GRAIN BOUNDARY RECOMBINATION ACTIVITY IN POLYCRYSTALLINE SILICON INVESTIGATED BY LBIC MAPPING AND DLTS
p. C6-160
M. PASQUINELLI, N. M'GAFFAD, H. AMANRICH and S. MARTINUZZI
Abstract | PDF file (36.43 KB) - LBIC ANALYSIS FOR GRAIN-BOUNDARY CHARACTERIZATION IN INHOMOGENEOUS MATERIALS
p. C6-161
H. EL GHITANI
Abstract | PDF file (36.57 KB) - RECOMBINATION AT DISLOCATION LEVELS LOCATED IN THE SPACE CHARGE REGION. EBIC CONTRAST EXPERIMENTS AND THEORY
p. C6-165
J.L. FARVACQUE and B. SIEBER
Abstract | PDF file (47.66 KB) - IN SITU OBSERVATION OF DISLOCATION MOTION IN CdTe USING EBIC
p. C6-166
J. KRONEWITZ and W. SCHRÖTER
Abstract | PDF file (30.40 KB) - RECONSTRUCTION OF THE DEFECT GEOMETRY BY SIMULTANEOUS EBIC/CL MEASUREMENTS ; THEORY AND EXPERIMENTAL RESULTS
p. C6-167
A. JAKUBOWICZ, M. BODE and H.-U. HABERMEIER
Abstract | PDF file (30.11 KB) - TEMPERATURE DEPENDENCE OF CL AND EBIC IMAGES OF DISLOCATED GaAs AND Si
p. C6-168
T. SEKIGUCHI, Y. MIYAMURA and K. SUMINO
Abstract | PDF file (51.11 KB) - LIGHT BEAM INDUCED CURRENT IMAGING OF THE ELECTRICAL ACTIVITY OF STACKING FAULTS IN CZ SILICON
p. C6-169
A. CASTALDINI, A. CAVALLINI, A. POGGI and E. SUSI
Abstract | PDF file (70.22 KB) - INTERNAL MEASUREMENTS FOR FAILURE ANALYSIS AND CHIP VERIFICATION OF VLSI CIRCUITS
p. C6-173
J. KÖLZER and J. OTTO
Abstract | PDF file (65.32 KB) - DETERMINATION OF ELECTRON BEAM CHARGING CONDITIONS OF OXIDES AT LOW ENERGY IN THE LOW DOSE RANGE
p. C6-174
M. VALENZA, P. GIRARD and B. PISTOULET
Abstract | PDF file (43.28 KB) - SCANNING ISOTHERMAL CURRENT TRANSIENT SPECTROSCOPY (SICTS) FOR DEEP LEVEL CHARACTERIZATION
p. C6-175
Y. TOKUMARU, H. OKUSHI and H. NAKA
Abstract | PDF file (38.54 KB) - HOLE-DIFFUSION LENGTH AND TRANSPORT PARAMETERS OF THIN CDS FILMS FROM A SCHOTTKY BARRIER
p. C6-176
J. EBOTHE
Abstract | PDF file (35.88 KB) - THICKNESS DEPENDENCE OF CATHODOLUMINESCENCE IN THIN FILMS
p. C6-177
J. YUAN, S. BERGER and L.M. BROWN
Abstract | PDF file (38.62 KB) - BEAM INDUCED VARIATIONS OF GaAs CATHODOLUMINESCENCE : EFFECT OF HYDROGEN AND DEFORMATION
p. C6-178
A. DJEMEL, J. CASTAING and J. CHEVALLIER
Abstract | PDF file (39.44 KB) - CATHODOLUMINESCENCE AND POSITRON ANNIHILATION STUDY OF DEFECT DISTRIBUTION IN III-V WAFERS
p. C6-179
F. DOMÍNGUEZ-ADAME, B. MÉNDEZ, J. PIQUERAS, N. DE DIEGO, J. LLOPIS and P. MOSER
Abstract | PDF file (38.26 KB) - OBSERVATION OF GETTERING PHENOMENA AT DEFECTS IN GaAs BY SIMULTANEOUS EBIC/CL MEASUREMENTS
p. C6-180
M. ECKSTEIN, A. JAKUBOWICZ, M. BODE and H.-U. HABERMEIER
Abstract | PDF file (33.08 KB) - A NEW APPROACH FOR THE PHYSICAL INTERPRETATION OF TEMPERATURE DEPENDENT EBIC CONTRAST MEASUREMENTS
p. C6-181
M. BODE and H.-U. HABERMEIER
Abstract | PDF file (41.79 KB) - ON THE TWO-DIMENSIONAL DETERMINATION OF p-n JUNCTIONS WITH THE EBIC COLLECTION PROBABILITY
p. C6-182
W. HOPPE and M. KITTLER
Abstract | PDF file (32.14 KB) - POSSIBILITIES OF FORMATION OF BRIGHT EBIC CONTRASTS DUE TO CRYSTAL DEFECTS IN SILICON
p. C6-183
H. BLUMTRITT, M. KITTLER and W. SEIFERT
Abstract | PDF file (28.01 KB) - MAJORITY CARRIER ASSESSMENT BY EBIC : DETERMINATION OF DOPANT CONCENTRATION AT COMPOSITION INHOMOGENEITIES
p. C6-184
C. FRIGERI
Abstract | PDF file (50.44 KB) - DOPING PROFILE INSPECTION IN SILICON BY LOW ACCELERATION VOLTAGE SEM-EBIC
p. C6-185
R. KUHNERT
Abstract | PDF file (45.69 KB) - MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND ANNEALED SILICON BY MEANS OF EBIC-SEM
p. C6-186
L.W. SNYMAN
Abstract | PDF file (36.26 KB) - EBIC MEASUREMENT OF BULK AND SURFACE RECOMBINATION IN p-TYPE SILICON : INFLUENCE OF OXIDATION AND HYDROGENATION
p. C6-187
I. DELIDAIS, P. MAUGIS, D. BALLUTAUD, N. TABET and J.-L. MAURICE
Abstract | PDF file (40.07 KB)