Table of contents
Le Journal de Physique Colloques
Vol. 44 No. C5 (Octobre 1983)
Interactions Laser-Solides, Recuits par Faisceaux d'Energie / Laser-Solid Interactions and Transient Thermal Processing of Materials
- PLASMA ASSISTED MELTING OF COVALENT SEMICONDUCTORS
p. C5-3
J. Bok
Abstract | PDF file (249.7 KB) - BOSE CONDENSATION AND THE ATHERMAL NATURE OF PULSED LASER ANNEALING
p. C5-11
J.A. Van Vechten
Abstract | PDF file (495.9 KB) - FUNDAMENTALS OF PULSED LASER IRRADIATION OF SILICON
p. C5-23
H. Kurz, L.A. Lompré and J.M. Liu
Abstract | PDF file (668.3 KB) - PLASMA TRANSPORT AND LASER ANNEALING
p. C5-37
G. Mahler and A. Forchel
Abstract | PDF file (180.2 KB) - LUMINESCENCE STUDY OF NON-EQUILIBRIUM EFFECTS IN LASER GENERATED PLASMA
p. C5-43
B. Laurich and A. Forchel
Abstract | PDF file (189.8 KB) - MECHANISMS OF MELTING OF SILICON
p. C5-49
M. Wautelet and L.D. Laude
Abstract | PDF file (210.5 KB) - THE E1 - E1 + Δ1 TRANSITIONS IN BULK GROWN AND IN IMPLANTED LASER ANNEALED HEAVILY DOPED GERMANIUM : LUMINESCENCE
p. C5-55
G. Contreras, A. Compaan, J. Wagner, M. Cardona and A. Axmann
Abstract | PDF file (179.7 KB) - PHOTOLUMINESCENCE IN HEAVILY DOPED Si AND Ge
p. C5-61
J. Wagner, A. Compaan and A. Axmann
Abstract | PDF file (142.0 KB) - STUDY OF SOME OPTICAL AND ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON LAYERS
p. C5-65
A. Slaoui, E. Fogarassy, J.C. Muller and P. Siffert
Abstract | PDF file (285.5 KB) - THERMAL CONDUCTIVITY MEASUREMENTS OF IMPLANTED Si
p. C5-73
T. Papa, F. Scudieri, M. Marinelli, U. Zammit and G. Cembali
Abstract | PDF file (122.4 KB) - INSTABILITY OF LIQUID METAL SURFACES UNDER INTENSE INFRARED IRRADIATION
p. C5-77
F. Keilmann
Abstract | PDF file (69.59 KB) - RENORMALIZATION EFFECTS OF THE POLARITON DISPERSION
p. C5-79
F. Tomasini, J.Y. Bigot and R. Levy
Abstract | PDF file (135.1 KB) - DEPTH MEASUREMENT OF THE PHASE CHANGE UNDER PULSED RUBY LASER ANNEALING
p. C5-83
M. Toulemonde, R. Heddache, F. Nielsen and P. Siffert
Abstract | PDF file (155.5 KB) - TRANSIENTS IN CW LASER HEATING OF SEMICONDUCTORS : GENERAL METHOD, ANALYTICAL SOLUTIONS AND ILLUSTRATIONS
p. C5-87
A. Maruani, Y.I. Nissim, F. Bonnouvrier and D. Paquet
Abstract | PDF file (163.6 KB) - MELTING AND FREEZING KINETICS INDUCED BY PULSED ELECTRON BEAM ANNEALING IN ION-IMPLANTED SILICON
p. C5-91
G. Chemisky, D. Barbier and A. Laugier
Abstract | PDF file (219.9 KB) - FEMTOSECOND REFLECTIVITY MEASUREMENT OF HIGHLY PHOTOEXCITED SILICON
p. C5-99
C. Hirlimann
Abstract | PDF file (635.7 KB) - TIME RESOLVED RAMAN SPECTRA DURING PULSED LASER HEATING OF SILICON
p. C5-107
G. Wartmann and D. von der Linde
Abstract | PDF file (167.9 KB) - CONDUCTIVITY TRANSIENTS OF Si AND InSb UNDER INTENSE LASER EXCITATION
p. C5-111
E.W. Kreutz, G. Treusch and W. Zimmer
Abstract | PDF file (631.7 KB) - ENERGY FLUCTUATIONS IN THE CARRIER RECOMBINATION PROCESS OF LASER IRRADIATED SEMICONDUCTORS
p. C5-119
M. Bertolotti
Abstract | PDF file (151.7 KB) - DYNAMICS OF LASER ANNEALING OF α-GaAs
p. C5-123
W. Marine, J. Marfaing, P. Mathiez and F. Salvan
Abstract | PDF file (687.6 KB) - LATTICE TEMPERATURE OF GaAs AND Si DURING PULSED LASER ANNEALING
p. C5-129
A. Pospieszczyk, M. Abdel Harith and B. Stritzker
Abstract | PDF file (34.50 KB) - MATERIAL DEPOSITION AND REMOVAL USING LASER-INITIATED CHEMISTRY
p. C5-133
R.M. Osgood and Jr.
Abstract | PDF file (589.8 KB) - MASKLESS MICRO ETCHING OF GaAs DIRECTLY CONTROLLED BY CALCULATOR
p. C5-139
S. Mottet and L. Henry
Abstract | PDF file (675.2 KB) - DOPANT INCORPORATION DURING NONEQUILIBRIUM SOLIDIFICATION
p. C5-145
C.W. White
Abstract | PDF file (1.402 MB) - EFFECT OF FAST SOLIDIFICATION ON IMPURITY TRAPPING AND AMORPHOUS FORMATION IN Si
p. C5-157
P. Baeri
Abstract | PDF file (1016 KB) - LASER AND ELECTRON BEAM ENHANCED CRYSTALLIZATION OF Si AND Ge
p. C5-171
R. Andrew and M. Wautelet
Abstract | PDF file (193.6 KB) - ON THE GROWTH FROM THE AMORPHOUS PHASE IN SEMICONDUCTORS
p. C5-175
J.C. Bourgoin and R. Asomoza
Abstract | PDF file (123.7 KB) - NATIVE OXIDES BEHAVIOR DURING PULSED LASER IRRADIATION OF GaAs
p. C5-179
C. Cohen, J. Siejka, D. Pribat, M. Berti, A.V. Drigo, G.G. Bentini and E. Jannitti
Abstract | PDF file (323.9 KB) - PICOSECOND LASER ANNEALING OF IMPLANTED Si AND GaAs : A COMPARATIVE STUDY WITH A RAMAN MICROPROBE
p. C5-187
J. Sapriel, Y.I. Nissim and J.L. Oudar
Abstract | PDF file (900.4 KB) - RAMAN STUDIES OF THE P LOCAL MODE VIBRATION IN P IMPLANTED, LASER ANNEALED Ge
p. C5-193
G. Contreras, A. Compaan and A. Axmann
Abstract | PDF file (96.96 KB) - PHONON SOFTENING IN ULTRA HEAVILY DOPED Si AND Ge
p. C5-197
A. Compaan, G. Contreras, M. Cardona and A. Axmann
Abstract | PDF file (197.8 KB) - THE ELECTRONIC STRUCTURE OF HEAVILY DOPED ION IMPLANTED LASER ANNEALED SILICON : ELLIPSOMETRIC MEASUREMENTS
p. C5-203
L. Viña, C. Umbach, A. Compaan, M. Cardona and A. Axmann
Abstract | PDF file (217.7 KB) - PULSED ELECTRON BEAM ANNEALING OF As AND B IMPLANTED SILICON
p. C5-209
D. Barbier, G. Chemisky, J.J. Grob, A. Laugier, P. Siffert and R. Stuck
Abstract | PDF file (234.7 KB) - ETUDE PAR MICROSCOPIE ELECTRONIQUE DE LA DIFFUSION INDUITE PAR LASER
p. C5-215
F. Broutet, J.C. Desoyer, E. Fogarassy and P. Siffert
Abstract | PDF file (550.2 KB) - THE ANNEALING BEHAVIOUR OF HIGH DOSE As+ IMPLANTS
p. C5-223
D.G. Hasko, R.A. McMahon and H. Ahmed
Abstract | PDF file (192.7 KB) - HIGHLY CONTROLLED DIFFUSION OF ION IMPLANTED ARSENIC BY MULTIPLE SCAN ELECTRON BEAM HEATING
p. C5-229
D.J. Godfrey, R.A. McMahon, H. Ahmed and M . Dowsett
Abstract | PDF file (194.6 KB) - DIFFUSION DE L'ALUMINIUM DANS LE SILICIUM CRISTALLIN PAR RECUIT LASER SEMI-CONTINU
p. C5-235
C. Leray, J.E. Bouree and M. Rodot
Abstract | PDF file (215.6 KB) - PULSED LASER AND ELECTRON BEAM INDUCED DIFFUSION OF ANTIMONY IN SILICON
p. C5-241
E. Fogarassy, P. Siffert, D. Barbier, G. Chemisky and A. Laugier
Abstract | PDF file (162.8 KB) - ANNEALING OF HIGH DOSE IMPLANTED GaAs WITH HALOGEN LAMPS
p. C5-247
Y.I. Nissim, B. Joukoff, J. Sapriel and N. Duhamel
Abstract | PDF file (172.5 KB) - RAPID THERMAL ANNEALING OF SELENIUM IMPLANTED InP
p. C5-253
S.S. Gill and B.J. Sealy
Abstract | PDF file (230.7 KB) - INCORPORATION DU PHOSPHORE DANS CdTe PAR RECUIT LASER
p. C5-261
C. Uzan, R. Legros and Y. Marfaing
Abstract | PDF file (656.6 KB) - DEEP LEVEL DEFECTS IN SILICON AFTER BEAM PROCESSING IN THE SOLID PHASE REGIME
p. C5-269
A. Chantre
Abstract | PDF file (453.8 KB) - ANALYSIS AND ORIGIN OF POINT DEFECTS IN SILICON AFTER LIQUID PHASE TRANSIENT ANNEALING
p. C5-281
A. Mesli, J.C. Muller and P. Siffert
Abstract | PDF file (610.6 KB) - ELECTRICAL CHARACTERISTICS OF Au SCHOTTKY CONTACTS EVAPORATED ON PULSED ELECTRON BEAM ANNEALED N-TYPE (100) SILICON
p. C5-297
M.S. Doghmane, D. Barbier and A. Laugier
Abstract | PDF file (176.1 KB) - RECUIT D'IMPLATATION PAR FAISCEAU D'ÉLECTRONS BALAYÉS
p. C5-303
C. Jaussaud, B. Biasse, A.M. Cartier and A. Bontemps
Abstract | PDF file (124.3 KB) - ELECTRON SPIN RESONANCE INVESTIGATION OF THE EFFECTS OF THE H2+ IMPLANTATION AND DIFFUSION ONE THE LASER INDUCED DEFECTS IN VIRGIN SILICON
p. C5-307
A. Goltzene, B. Meyer, C. Schwab, J.C. Muller and P. Siffert
Abstract | PDF file (147.4 KB) - LOW POWER LASER ANNEALING EFFECTS IN α-Ge
p. C5-313
U. Zammit, M. Marinelli, G. Vitali and F. Scudieri
Abstract | PDF file (2.079 MB) - DÉFAUTS INDUITS DANS Si PAR IMPLANTATION DIRECTE OU A TRAVERS UNE COUCHE DE SiO2
p. C5-319
B. Balland, B. Remaki, P. Pinard and E. Mercier
Abstract | PDF file (490.6 KB) - RECRYSTALLIZATION OF Si ON INSULATING SUBSTRATES BY USING INCOHERENT LIGHT SOURCES
p. C5-327
M. Haond
Abstract | PDF file (1.222 MB) - TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON BEAM HEATING OF DEPOSITED POLYSILICON
p. C5-337
J.R. Davis, R.A. McMahon and H. Ahmed
Abstract | PDF file (1.623 MB) - THERMAL MODELING OF CW LASER-CRYSTALLIZATION OF SOI
p. C5-343
J.M. Hode and J.P. Joly
Abstract | PDF file (618.8 KB) - APPLICATIONS OF TRANSIENT ANNEALING TO SOLAR CELL PROCESSING
p. C5-353
G.G. Bentini
Abstract | PDF file (694.9 KB) - FABRICATION OF HIGH EFFICIENCY SILICON SOLAR CELLS BY LASER INDUCED DIFFUSION
p. C5-363
E. Fogarassy and P. Siffert
Abstract | PDF file (198.6 KB) - EFFECT OF HEATING SAMPLES DURING PULSED ELECTRON BEAM ANNEALING ON THE OPEN-CIRCUIT VOLTAGE OF SILICON SOLAR CELLS
p. C5-369
A. Laugier, D. Barbier, M.S. Doghmane and G. Chemisky
Abstract | PDF file (424.2 KB) - PULSED AND CW LASER TREATMENTS OF IMPLANTED POLYSILICON SOLAR CELLS
p. C5-375
J.C. Muller, E. Courcelle, S. Barthe, P. Siffert, J. Com-Nougué, E. Kerrand and C. Tessari
Abstract | PDF file (1.136 MB) - INCOHERENT-LIGHT ANNEALING OF PHOSPHORUS IMPLANTED SILICON, WITH SOLAR CELL PRODUCTION IN VIEW
p. C5-381
L.D. Nielsen, A.N. Larsen and V.E. Borisenko
Abstract | PDF file (245.2 KB) - ANWENDUNG DES LASERAUSHEILENS FÜR HALBLEITERBAUELEMENTE
p. C5-389
H. Ryssel and J. Götzlich
Abstract | PDF file (2.298 MB) - PROPRIÉTÉS DES JONCTIONS p/n DANS LE SILICIUM OBTENUES PAR IMPLANTATION IONIQUE ET RECUIT RAPIDE
p. C5-401
M.C. Boissy, P. Ruterana and G. Nouet
Abstract | PDF file (2.066 MB) - TRANSISTORS MADE IN SINGLE-CRYSTAL SOI FILMS
p. C5-409
J.P. Colinge, E. Demoulin, D. Bensahel and G. Auvert
Abstract | PDF file (1.247 MB) - RAPID ISOTHERMAL ANNEALING OF ION IMPLANTED SILICON DEVICES BY UNIFORM LARGE AREA IRRADIATION WITH A NEW ELECTRON BEAM SYSTEM
p. C5-415
L. Dori, M. Impronta, G. Lulli, P.G. Merli and M. Severi
Abstract | PDF file (747.2 KB) - PULSED ANNEALING OF SILICON/PLATINUM SYSTEMS
p. C5-421
E. D'Anna, G. Leggieri, A. Luches, V. Nassisi, F. Nava and C. Nobili
Abstract | PDF file (149.5 KB) - DOPING OF SILICON WITH ARSENIC AND PHOSPHORUS FROM SPIN-ON SOURCES EXPOSED TO INCOHERENT LIGHT
p. C5-427
A.N. Larsen, V.E. Borisenko and L.D. Nielsen
Abstract | PDF file (252.1 KB) - THE APPLICATION OF LASER ANNEALING TO DOPANT PROFILING FOR SEMICONDUCTOR DEVICES
p. C5-433
A.E. Adams and S.L. Morgan
Abstract | PDF file (172.4 KB) - PRODUCTION OF SMALL OHMIC CONTACTS BY LASER PROCESSING FOR Si AND GaAs DEVICES
p. C5-439
H. Kräutle, M. Schröder and H. Beneking
Abstract | PDF file (578.1 KB) - THERMAL PULSE ANNEALING OF TITANIUM AND TANTALUM SILICIDES
p. C5-445
P.J. Rosser and G. Tomkins
Abstract | PDF file (127.9 KB) - PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON
p. C5-449
P. Baeri, M.G. Grimaldi, E. Rimini and G. Celotti
Abstract | PDF file (670.2 KB) - REACTION KINETICS OF MoSi2 SILICIDE OBTAINED BY cw LASER ANNEALING OF Si (a) AND Sipoly/Mo BILAYERS
p. C5-455
J. Torres, G. Bomchil, Y. Pauleau, Ph. Lami and G. Auvert
Abstract | PDF file (589.4 KB) - SELFALIGNED METALLIC CONTACTS ON GaP : N-LEDs PROCESSED BY LASER PULSE IRRADIATION-INDUCED ABLATION
p. C5-461
E.E. Krimmel, A.G.K. Lutsch, L. Hoffman and C. Weyrich
Abstract | PDF file (907.6 KB) - ULTRASHORT HEAT TRANSIENTS IN METALS UNDER LASER IRRADIATION
p. C5-469
L.F. Donà dalle Rose
Abstract | PDF file (1.258 MB) - PULSED LASER TREATMENT OF Eu AND La IMPLANTED NICKEL : SURFACE ALLOYING, TRAPPING AND DAMAGE
p. C5-481
G. Battaglin, A. Carnera, J. Chaumont, G. Della Mea, L.F. Donà dalle Rose, A.K. Jain, V.N. Kulkarni, P. Mazzoldi, A. Miotello and D.K. Sood
Abstract | PDF file (306.0 KB) - AMORPHOUS AuBi ALLOYS PRODUCED BY LASER QUENCHING AND ION IRRADIATION
p. C5-489
A. Wolthuis and B. Stritzker
Abstract | PDF file (165.9 KB) - GRAIN BOUNDARY INTERDIFFUSION AND SURFACE COMPOUND FORMATION IN Al/Sb THIN FILM COUPLES
p. C5-495
R. Andrew, L. Baufay, Y. Canivez and A. Pigeolet
Abstract | PDF file (193.6 KB) - METASTABLE PHASES OBTAINED BY HIGH POWER LASER SURFACE MELTING OF CAST-IRON AND STEELS
p. C5-501
E. Ramous, L. Giordano, G. Principi and A. Tiziani
Abstract | PDF file (1.735 MB) - MIXAGE PAR FAISCEAU LASER PULSE DE MULTICOUCHES DE FER ET D'ALUMINIUM DEPOSE SOUS VIDE
p. C5-507
E.L. Mathe, C. Jaouen, A. Bellara and J.C. Muller
Abstract | PDF file (1.227 MB)