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J. Phys. Colloques Vol. 44 No. C4

Le Journal de Physique Colloques

Vol. 44 No. C4 (Septembre 1983)

Colloque International du C.N.R.S. sur les Propriétés et Structure des Dislocations dans les Semiconducteurs / Properties and Structure of Dislocations in Semiconductors




  • ELUCIDATION OF DISLOCATION CORE STRUCTURES IN SILICON BY HIGH RESOLUTION ELECTRON MICROSCOPY     p. C4-3
    G.L. Hutchison
    Abstract | PDF file (1.917 MB)


  • LA STRUCTURE DU COEUR DES DISLOCATIONS DANS LE SILICIUM CZ ETUDIEE PAR MICROSCOPIE ELECTRONIQUE     p. C4-15
    A. Bourret, J. Desseaux-Thibault and F. Lancon
    Abstract | PDF file (1.535 MB)


  • STRUCTURE AND ENERGY LEVELS OF DISLOCATIONS IN SILICON     p. C4-25
    S . Marklund
    Abstract | PDF file (476.3 KB)


  • CORE STRUCTURE OF 90° PARTIAL DISLOCATIONS IN DIAMOND     p. C4-37
    K.W. Lodge, A. Lapiccirella, N. Tomassini and S.L. Altmann
    Abstract | PDF file (246.0 KB)


  • ENERGY LEVELS AND PROPERTIES OF DEFECTS ON RECONSTRUCTED DISLOCATIONS IN SILICON     p. C4-43
    M.I. Heggie and R. Jones
    Abstract | PDF file (245.2 KB)


  • DISLOCATION MOBILITY MEASUREMENTS : AN ESSENTIAL TOOL FOR UNDERSTANDING THE ATOMIC AND ELECTRONIC CORE STRUCTURES OF DISLOCATIONS I N SEMICONDUCTORS     p. C4-51
    F. Louchet and A. George
    Abstract | PDF file (1.777 MB)


  • THEORIES OF DISLOCATION MOBILITY IN SEMICONDUCTORS     p. C4-61
    R. Jones
    Abstract | PDF file (306.9 KB)


  • DISLOCATION BENDS I N HIGH STRESS DEFORMED SILICON CRYSTALS     p. C4-69
    H. Gottschalk
    Abstract | PDF file (1.696 MB)


  • A SIMPLE TECHNIQUE FOR MEASURING DOPING EFFECTS ON DISLOCATION MOTION IN SILICON     p. C4-75
    S.G. Roberts, P. Pirouz and P.B. Hirsch
    Abstract | PDF file (869.9 KB)


  • ASYMMETRY OF ISOLATED DISLOCATIONS MOBILITY IN Ge AND Si SINGLE CRYSTALS     p. C4-85
    V.I. Nikitenko, B.Ya. Farber and E.B. Yakimov
    Abstract | PDF file (1.303 MB)


  • DEEP ELECTRON LEVELS AND FURTHER EFFECTS OF TOPOLOGICAL DISORDER BY DISLOCATIONS     p. C4-93
    H. Teichler and H. Veth
    Abstract | PDF file (365.1 KB)


  • DISLOCATION ELECTRON SPECTRUM AND THE MECHANISM OF DISLOCATION MICROWAVE CONDUCTION IN SEMICONDUCTORS     p. C4-103
    Yu.A. Ossipyan
    Abstract | PDF file (936.0 KB)


  • ELECTRICAL TRANSPORT IN THE DISLOCATION CORE     p. C4-113
    R. Labusch
    Abstract | PDF file (33.80 KB)


  • EXPERIMENTAL STUDIES OF ENERGY STATES ASSOCIATED WITH DISLOCATIONS IN III-V COMPOUNDS     p. C4-115
    J.L. Farvacque, D. Ferre and D. Vignaud
    Abstract | PDF file (470.7 KB)


  • OPTICAL PROPERTIES OF PLASTICALLY DEFORMED AIIBVI CRYSTALS     p. C4-125
    V.Ya. Emelin, N.V. Klassen, V.D. Negrii and Yu.A. Ossipyan
    Abstract | PDF file (317.5 KB)


  • PHOTOLUMINESCENCE FROM DISLOCATED SILICON CRYSTALS     p. C4-133
    M. Suezawa and K. Sumino
    Abstract | PDF file (275.2 KB)


  • HYDROGENATION EFFECTS ON RADIATIVE RECOMBINATION IN TWISTED SILICON     p. C4-141
    D. Gwinner
    Abstract | PDF file (231.3 KB)


  • STRAIN INDUCED EFFECTS OF DISLOCATIONS IN CdS:SHIFT OF EXCITONIC LINES, PHOTOVOLTAIC EFFECT     p. C4-149
    O. Vyvenko
    Abstract | PDF file (201.2 KB)


  • OPTICAL ABSORPTION STUDIES OF DISLOCATION INDUCED DEEP LEVELS IN InSb     p. C4-157
    V. Vignaud and J.L. Farvacque
    Abstract | PDF file (211.5 KB)


  • GALVANOMAGNETIC PROPERTIES OF PLASTICALLY DEFORMED InSb     p. C4-163
    D. Ferre and J.L. Farvacque
    Abstract | PDF file (200.4 KB)


  • CHARACTERIZATION OF STRESS FIELD AND ELECTRIC ACTIVITY OF DISLOCATIONS IN SEMICONDUCTORS     p. C4-169
    A. Haydar and A. Coret
    Abstract | PDF file (1.572 MB)


  • DEFORMATION LUMINESCENCE IN II-VI CRYSTALS     p. C4-183
    S.I. Bredikhin and S.Z. Shmurak
    Abstract | PDF file (276.7 KB)


  • RELAXATION LONGUE DUREE DE LA PHOTOCONDUCTIVITE DANS CdTe     p. C4-189
    A. Zozime and W. Schröter
    Abstract | PDF file (132.6 KB)


  • INTERACTION BETWEEN DISLOCATIONS AND IMPURITIES IN SILICON     p. C4-195
    K. Sumino
    Abstract | PDF file (519.6 KB)


  • COMBINED ELECTRON MICROSCOPICAL AND DLTS (ESP, DSLTS) INVESTIGATIONS IN SEMICONDUCTORS     p. C4-207
    O. Breitenstein and J. Heydenreich
    Abstract | PDF file (2.431 MB)


  • RECOVERY PROCESSES IN THE HIGH-TEMPERATURE DEFORMATION OF GERMANIUM, SILICON AND INDIUM ANTIMONIDE     p. C4-217
    H. Siethoff
    Abstract | PDF file (367.9 KB)


  • PRECIPITATION DE L'OXYGENE SUR LES DISLOCATIONS DU SILICIUM CZ : ANALYSE THERMODYNAMIQUE ET STABILITE     p. C4-227
    A. Bourret
    Abstract | PDF file (812.6 KB)


  • LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE     p. C4-233
    B. Hamilton, A. R. Peaker and D. R. Wight
    Abstract | PDF file (631.4 KB)


  • PLASTIC DEFORMATION OF SILICON AT LOW TEMPERATURE AND THE INFLUENCE OF DOPING     p. C4-243
    J. Rabier, P. Veyssière and J.L. Demenet
    Abstract | PDF file (1.279 MB)


  • THE EFFECT OF HYDROGEN ON DISLOCATION PHOTOLUMINESCENCE IN SILICON     p. C4-255
    Yu. A. Ossipyan, A. M. Rtishchev and E. A. Steinman
    Abstract | PDF file (306.6 KB)


  • ELECTRON MICROSCOPICAL STUDY OF OXYGEN RELATED DEFECTS IN CZOCHRALSKI SILICON     p. C4-261
    H. Bender, C. Claeys, J. Van Landuyt, G. Declerck, S. Amelinckx and R. Van Overstraeten
    Abstract | PDF file (2.115 MB)


  • QUANTITATIVE EVALUATION OF THE EBIC CONTRAST OF DlSLOCATIONS     p. C4-269
    C. Donolato
    Abstract | PDF file (786.2 KB)


  • CATHODOLUMINESCENCE STUDIES OF DISLOCATIONS IN SEMICONDUCTORS     p. C4-277
    M. Dupuy
    Abstract | PDF file (560.6 KB)


  • THE TEMPERATURE DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON     p. C4-289
    A. Ourmazd, P.R. Wilshaw and G.R. Booker
    Abstract | PDF file (1.674 MB)


  • DEFECTS IN CADMIUM TELLURIDE AS STUDIED BY SEM/EBIC     p. C4-297
    B. Sieber and M. Dupuy
    Abstract | PDF file (1.371 MB)


  • LATTICE DEFECT EFFECTS IN INDUCED CURRENT SCANNING MICROSCOPY     p. C4-305
    A. Castaldini, A. Cavallini and P. Gondi
    Abstract | PDF file (1.921 MB)


  • X-RAY AND SCANNING CATHODOLUMINESCENCE IMAGING OF SMALL-ANGLE GRAIN BOUNDARIES AND DISLOCATIONS IN CdTe CRYSTALS     p. C4-313
    M. Klimkiewicz and J. Auleytner
    Abstract | PDF file (892.5 KB)


  • DEEP LEVEL DEFECTS IN PLASTICALLY DEFORMED SILICON     p. C4-319
    E.R. Weber and H. Alexander
    Abstract | PDF file (920.3 KB)


  • CAPACITANCE TRANSIENT SPECTROSCOPY OF STATES LOCALISED AT DISLOCATIONS     p. C4-329
    W. Schröter and M. Seibt
    Abstract | PDF file (290.9 KB)


  • TRANSIENT ELECTRICAL PROPERTIES OF LOW ANGLE TILT BOUNDARIES IN GROWN GERMANIUM BICRYSTALS     p. C4-339
    A. Broniatowski
    Abstract | PDF file (192.4 KB)


  • SPIN-DEPENDENT RECOMBINATION AT DISLOCATION DANGLING BONDS IN Si     p. C4-345
    V.V. Kveder, Yu.A. Ossipyan and A . I . Shalynin
    Abstract | PDF file (282.4 KB)


  • CREATION OF AsGa DEFECTS BY PLASTIC DEFORMATION OF GaAs CRYSTALS     p. C4-353
    T. Figielski, T. Wosiski and A. Morawski
    Abstract | PDF file (231.1 KB)


  • HYDROGENATION STUDIES OF DEFORMED n-Si     p. C4-359
    B. Pohoryles
    Abstract | PDF file (144.6 KB)


  • THE PLASTICITY OF A SEMICONDUCTING COMPOUND : CdTe, ELECTRICAL MEASUREMENT AND CHEMOMECHANICAL EFFECT     p. C4-365
    P. Haasen, H. Müller and G. Zoth
    Abstract | PDF file (266.1 KB)


  • RECOMBINATION ENHANCED MOBILITY OF DISLOCATIONS IN III-V COMPOUNDS     p. C4-375
    K. Maeda and S. Takeuchi
    Abstract | PDF file (905.8 KB)


  • PLASTIC DEFORMATION OF II-VI COMPOUNDS WITH SPHALERITE STRUCTURE : EXAMPLE ZnSe, ZnTe     p. C4-387
    G. Rivaud and J.C. Desoyer
    Abstract | PDF file (1.295 MB)


  • ELIMINATION OF DISLOCATIONS IN GaAs SINGLE CRYSTALS     p. C4-397
    M. Duseaux, C. Schiller, J.P. Cornier, J.P. Chevalier and J. Hallais
    Abstract | PDF file (3.394 MB)


  • ETUDE DES DEFAUTS DANS LES COUCHES HETEROEPITAXIALES DE MATERIAUX I I I-V PAR L'ANALYSE METALLOGRAPHIQUE SUR BISEAU CHIMIQUE     p. C4-409
    A.M. Huber, G. Laurencin and M. Razeghi
    Abstract | PDF file (904.5 KB)


  • CORRELATION ENTRE LES DISLOCATIONS, LES CONCENTRATIONS EN CARBONE ET LES LONGUEURS DE DIFFUSION DANS DU SILICIUM POLYCRISTALLIN C.G.E     p. C4-415
    H . Amzil, L. Ammor, E . Psaila, M. Zehaf, G. Mathian, S . Martinuzzi, J.P. Crest, J . Oualid, B. Pichaud and F . Minari
    Abstract | PDF file (555.4 KB)


  • THEORETICAL DESCRIPTION OF THE INFLUENCE OF DISLOCATIONS ON THE LUMINESCENCE OF LIGHT-EMITTING DIODES     p. C4-423
    L. Pasemann
    Abstract | PDF file (313.1 KB)


  • CHARACTERIZATION OF DISLOCATIONS AND THEIR EFFECTS IN SILICON DEVICE TECHNOLOGY     p. C4-437
    M. Kittler, W. Seifert, E. Bugiel and H. Richter
    Abstract | PDF file (2.443 MB)


  • SOME ASPECTS OF THE MEASUREMENTS OF ELECTRICAL EFFECTS OF DISLOCATIONS IN SILICON USING A COMPUTERISED EBIC SYSTEM     p. C4-445
    P.R. Wilshaw, A. Ourmazd and G.R. Booker
    Abstract | PDF file (245.5 KB)


  • ELECTRON STATES ASSOCIATED WITH PARTIAL DISLOCATIONS IN DIAMOND     p. C4-453
    A. Persson
    Abstract | PDF file (218.9 KB)


  • BAND STRUCTURE OF VACANCIES AND DISLOCATIONS IN DIAMOND     p. C4-461
    R. Jones and T.E.G. King
    Abstract | PDF file (132.0 KB)


  • SOME EXAMPLES OF QUANTITATIVE E.B.I.C. MODE FOR THE STUDY OF THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTOR DEVICES     p. C4-465
    J.F. Bresse
    Abstract | PDF file (114.5 KB)


  • ON SOME ASPECTS OF THE MOBILITY OF DISLOCATIONS IN SLIGHTLY n-DOPED InSb SINGLE CRYSTALS     p. C4-469
    J. Di Persio and R. Kesteloot
    Abstract | PDF file (2.365 MB)


  • ON THE MOTION OF DISLOCATION BENDS IN TERMS OF THE KINK MODEL     p. C4-475
    H. Gottschalk
    Abstract | PDF file (123.0 KB)


  • LA MICROSCOPIE ACOUSTIQUE ET SES APPLICATIONS AUX DEFAUTS DANS LES SEMICONDUCTEURS     p. C4-479
    J. Attal, J.M. Dandonneau, M. Zahouni and Ly Cong Can
    Abstract | PDF file (1.021 MB)


  • PHOTOACOUSTIC SPECTROSCOPY OF DISLOCATED SILICON CRYSTALS     p. C4-485
    M. Suezawa
    Abstract | PDF file (109.2 KB)


  • PHOTOACOUSTICS, NEW METHODS TO STUDY OPTICAL PROPERTIES OF DISLOCATIONS ?     p. C4-489
    F. Auzel
    Abstract | PDF file (213.7 KB)